LGD18N40ATH

Overview

The Littelfuse LGD18N40ATH is a 400 V, 18 A N-channel Ignition IGBT in a DPAK package. It features monolithic circuitry integrating ESD protection and inductive coil drivers. Key electrical parameters include a collector-emitter voltage (VCES) of 430 VDC, continuous collector current (IC) of 15 ADC at 25 °C, and pulsed current of 50 AAC. The device offers low saturation voltage, high pulsed current capability, and optional gate resistor integration. It supports unclamped inductive switching energy up to 400 mJ and reverse avalanche energy of 2000 mJ. Operating temperature range spans -55 °C to +175 °C.

Feature Summary

• Monolithic integration of ESD diode protection and inductive coil drivers for ignition applications
• Low threshold voltage enabling direct interface with logic or microprocessor devices
• Voltage clamp limits stress applied to load during switching events
• New design increases unclamped inductive switching (UIS) energy per area

Applications

• Ignition systems
• Direct fuel injection circuits
• High voltage and high current switching applications

Procurement Notes

Verify the specific ordering suffix 'ATH' corresponds to the Tape & Reel packing mode with a minimum order quantity of 2500 units as documented in the datasheet. Confirm that the component meets AEC-Q101 qualification requirements if automotive application compliance is necessary. Ensure the DPAK package dimensions align with the recommended solder pad layout provided in the official documentation to guarantee proper thermal and mechanical performance.

Selection Notes

Select this component for designs requiring integrated ESD protection and coil driving capabilities within a compact DPAK footprint. The low threshold voltage facilitates easy interfacing with standard logic levels. Consider the thermal resistance values and safe operating area curves when designing for high-temperature environments or inductive loads. Verify that the short-circuit withstand times meet the specific fault tolerance requirements of the target circuit topology.

Part Context

This part belongs to Littelfuse's Logic Level Insulated Gate Bipolar Transistor (IGBT) series designed for automotive and industrial power switching. It is specifically engineered for ignition and fuel injection systems where high voltage and current handling are critical. The device integrates protective features typically requiring external components, simplifying the overall circuit design and reducing board space requirements compared to discrete solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum short-circuit withstand time for the LGD18N40ATH?

The device supports two short-circuit withstand times: 750 µs for Test 1 (3 pulses with 10 ms period) and 5.0 ms for Test 2 (3 pulses with 10 ms period).

Does the LGD18N40ATH include internal gate resistance?

Yes, the datasheet indicates an optional integrated gate resistor (RG) with a typical value of 70 Ω and an integrated gate-emitter resistor (RGE) with a typical value of 16 Ω.

What is the reverse avalanche energy rating?

The reverse avalanche energy (EAS(R)) is rated at 2000 mJ under conditions of VCC = 100 V, VGE = 20 V, PkIL = 18.3 A, L = 6.0 mH, and starting TJ = 150 °C.