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LMG2640RRGR is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is 650V 105M GAN HALF-BRIDGE WITH I. Review the specifications below when checking this part for your BOM.
The LMG2640RRGR is an integrated 650V Gallium Nitride (GaN) half-bridge power stage manufactured by Texas Instruments. It combines a GaN high-side and low-side transistor with an integrated gate driver, protection circuits, and current sensing capabilities in a single package. The device features a typical on-resistance of 105 mΩ for the high-side and 85 mΩ for the low-side. It operates with a supply voltage range of 10 V to 26 V and supports peak output currents up to 24 A. The component is housed in a 40-pin VFQFN exposed pad package (7x9 mm) and is rated for operating temperatures between -40°C and +125°C.
Verify the specific suffix RRGR indicates tape and reel packaging when ordering. Confirm the device meets RoHS compliance requirements for your region. Ensure the procurement channel provides valid traceability documentation. Check for any specific handling instructions related to moisture sensitivity levels before assembly. Validate that the supplier is an authorized distributor to guarantee component authenticity.
Select this component when designing systems requiring high power density and switching frequencies above traditional silicon MOSFETs. The integrated nature reduces external component count compared to discrete solutions. Consider the 650V rating for intermediate bus architectures. Evaluate the thermal performance requirements given the compact VQFN-40 package size. Ensure the control circuitry can interface with the integrated driver inputs and current sense outputs effectively.
This part belongs to Texas Instruments' LMG26xx series of integrated GaN power stages. These devices are designed to simplify the implementation of high-performance power supplies by combining power switches and drivers. The LMG2640 specifically targets applications needing robust 650V blocking capability with low conduction losses. It complements other TI GaN products like the LMG2610, which offers different resistance characteristics.
Direct replacements may include the LMG2610RRGR if lower on-resistance is acceptable, though electrical parameters differ. Verify pin compatibility and thermal requirements when substituting with other 650V GaN half-bridges from Texas Instruments or competitors. Ensure the replacement supports the same supply voltage range and control interface signals.
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