LMG3522R030RQSR

Power Driver Modules Overview

The LMG3522R030RQSR is a 650V GaN-on-Si FET with an integrated silicon driver, protection, and temperature reporting. It features a 30mΩ on-resistance at 25°C and operates from a 7.5V to 18V supply. The device supports switching frequencies up to 2MHz and offers adjustable slew rates between 20V/ns and 150V/ns via the RDRV pin. It includes cycle-by-cycle overcurrent and latched short-circuit protection with less than 100ns response time, withstands 720V surge during hard-switching, and provides digital temperature reporting through a PWM output.

Power Driver Modules Feature Summary

• Integrates a high-precision gate bias voltage for enhanced switching SOA compared to discrete drivers.
• Provides robust protection including cycle-by-cycle overcurrent, latched short-circuit, and self-protection against internal overtemperature and UVLO.
• Features advanced power management with digital temperature reporting via a variable duty cycle PWM output.
• Utilizes a top-side cooled 12mm x 12mm VQFN package that separates electrical and thermal paths for minimal power loop inductance.

Power Driver Modules Applications

• Switch-mode power converters
• Merchant network and server PSU
• Solar inverters and industrial motor drives
• Uninterruptible power supplies

Power Driver Modules Procurement Notes

Verify the specific ordering suffix 'RQSR' corresponds to the required tape-and-reel packaging format as defined in the mechanical information section of the datasheet. Confirm that the component meets automotive qualification requirements indicated by the '-Q1' designation if applicable to your system design. Ensure all input documentation matches the latest revision date to account for any updates in absolute maximum ratings or thermal metrics.

Power Driver Modules Selection Notes

Select this component for designs requiring high power density and efficiency in hard-switching topologies. The adjustable slew rate allows active EMI control and switching performance optimization. Note that the LMG3522R030 variant lacks zero-voltage detection (ZVD) and zero-current detection (ZCD) features found in the LMG3526R030 and LMG3527R030 variants respectively; choose accordingly based on soft-switching requirements.

Power Driver Modules Part Context

This device belongs to the LMG352xR030 family of integrated GaN FETs from Texas Instruments. It is designed to replace discrete Si MOSFET and gate driver combinations, simplifying layout and reducing component count. The integration of the driver directly onto the GaN die minimizes parasitic inductance, enabling faster switching speeds and cleaner waveforms in high-frequency power conversion applications.

Power Driver Modules Replacement Considerations

LMG3526R030RQSR

Power Driver Modules FAQ

Does the LMG3522R030 support zero-voltage switching?

No, the LMG3522R030 does not include a zero-voltage detection (ZVD) feature. This functionality is available only in the LMG3526R030 variant within the same family.

How is the junction temperature reported?

The device reports temperature via the TEMP pin, which outputs a fixed 9kHz PWM signal. The duty cycle of this waveform varies proportionally with the junction temperature, allowing for digital monitoring.

What is the response time for fault protection?

The device features cycle-by-cycle overcurrent and latched short-circuit protection with a response time of less than 100ns.