LPT16ED

$17.53

Description：RF TRANS NPN 4V 16GHZ DIE
Series：-

SKU:b0edf8f9f4fa Category: Bipolar RF Transistors Brand: Skyworks Solutions Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4V 16GHZ DIE
Series：-
Mfr：Skyworks Solutions Inc.
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4V
Frequency - Transition：16GHz
Noise Figure (dB Typ @ f)：-
Gain：5.2dB
Power - Max：250mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 2V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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LPT16ED

Overview

The LPT16ED is a silicon germanium (SiGe) low phase noise, high frequency NPN transistor designed for oscillator applications up to 16 GHz. It features gold bump pads for wire bonding or flip-chip attachment and operates down to 1 volt at 2 mA. The device provides +13 dBm typical output power at VCE of 3 V and IC of 20 mA. Key electrical characteristics include a collector-emitter breakdown voltage (BVCEO) of 4.5 V typ., maximum available gain of 5.2 dB at 16 GHz, and insertion power gain of 2.6 dB at 16 GHz. Residual phase noise is -142 dBc/Hz at 100 Hz offset.

Feature Summary

Low 1/f noise performance with -142 dBc/Hz at 100 Hz offset
Gold bump pads enabling wire bonding or direct die attachment
High thermal conductivity and superior reliability under harsh conditions

Applications

Low phase noise oscillators up to 16 GHz
VCOs, DROs, and YIG oscillators
Point-to-point radios
Satellite communications
Fiber optics (OC-192 and OC-768)
Local Multipoint Distribution Systems (LMDS)

Procurement Notes

Verify the specific ordering suffix and packaging configuration before procurement. Confirm that the bare die format aligns with assembly capabilities. Ensure ESD protection protocols are followed during handling due to the high-performance RF nature of the component.

Selection Notes

Select this component for designs requiring ultra-low phase noise in the microwave range. Evaluate biasing requirements against the minimum operating voltage of 1 V. Consider the bare die package constraints and ensure appropriate substrate and mounting infrastructure are available for direct attachment.

Part Context

The LPT16ED belongs to the SiGe Bipolar Transistor family from Skyworks Solutions Inc. It utilizes silicon germanium technology to deliver outstanding high-frequency performance combined with high thermal conductivity. This specific model is optimized for oscillator applications where low phase noise is critical.