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Product Detailed Parameters
- Description：JFET N-CH 40V 10MA 8DFN
- Series：-
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：6 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：13pF @ 20V
- Resistance - RDS(On)：38 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 135°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VFDFN Exposed Pad
- Supplier Device Package：8-DFN (2x2)
- Grade：-
- Qualification：-
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Overview
The LS26VNS is an N-Channel JFET voltage controlled resistor with a drain-source resistance managed by a DC bias voltage applied to the gate. It operates within a junction temperature range of -55°C to +135°C and supports continuous power dissipation of 350mW at 25°C. The device provides a predictable RDS change from 14Ω to 38Ω as VGS approaches pinch-off, maintaining performance without VGS variation. Key electrical parameters include a gate-to-source breakdown voltage of -40V, input capacitance of 13pF, and reverse transfer capacitance of 3.6pF.
Feature Summary
- Continuous voltage-controlled resistance capability
- High off-isolation and high input impedance
- Gain ranging capability with simplified drive voltage requirements
- No circuit interaction during operation
Applications
- Variable gain amplifiers
- Automatic gain control circuits
- Voltage controlled oscillators
- Small signal attenuations
- Filter range control
Procurement Notes
Verify the specific package variant (TO-92, SOT-23, or DFN) matches the design footprint. Confirm RoHS compliance status for environmental regulations. Ensure the selected part number suffix aligns with the required lead count and physical dimensions. Cross-reference absolute maximum ratings against system operating conditions to prevent serviceability impairment.
Selection Notes
Select this component for low-level AC signal applications requiring no DC component on the drain-source path. Evaluate the static RDS(on) ratio of 0.90 to 1.0 for consistency needs. Consider the -40V gate-to-source breakdown voltage for high-voltage tolerance requirements. Verify that the 14Ω to 38Ω resistance range meets the specific attenuation or gain control specifications.
Part Context
This component belongs to the LS26VNS series of N-Channel JFETs designed specifically as voltage controlled resistors. It is available in multiple packages including TO-92, SOT-23, and DFN. The series is engineered for applications demanding predictable resistance changes controlled by DC bias voltages on a high-impedance gate terminal.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source documentation.
FAQ
What is the minimum RDS value for the LS26VNS?
The minimum RDS is 14 Ω, which occurs when VGS is -1.0V.
How does the LS26VNS handle gate drive?
It features simplified drive voltage capabilities and high input impedance, allowing control via a DC bias voltage applied to the gate terminal.
What is the purpose of leads 1, 2, 4, 5, and 7 in the DFN package?
In the DFN 8L package, leads 1, 2, 4, 5, and 7 have no connection.
