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The LS351 is a high-voltage super-beta monolithic dual NPN transistor manufactured by Linear Integrated Systems. It features very high current gain, low output capacitance, and tight base-emitter voltage matching. Key electrical parameters include a typical hFE of 2000 at 1.0µA, maximum collector current of 5mA, and a cutoff frequency (fT) of 100MHz. The device has a maximum power dissipation of 625mW at 25°C with a linear derating factor of 5mW/°C above this temperature. Operating junction temperature ranges up to 150°C, and storage temperature spans -65°C to 150°C.
Verify the manufacturer designation as Linear Integrated Systems or its successor entities, as original production may have ceased. Confirm the TO-78 metal can package style and 6-lead configuration match the specific application requirements. Check for RoHS compliance status if required by modern assembly processes. Ensure the part number suffix corresponds to the correct lead finish and binning specifications.
Select this component when extremely high beta is critical for minimizing base current errors in precision analog designs. The tight VBE matching makes it suitable for differential pairs where offset voltage must be minimized. Consider the 5mA collector current limit and 625mW power dissipation constraints during thermal design. Verify that the TO-78 package fits the available board space and mounting constraints.
The LS351 belongs to a family of high-voltage super-beta dual NPN transistors from Linear Integrated Systems, alongside models like LS302 and LS303. These devices are designed for specialized analog applications where standard transistors lack sufficient gain or matching accuracy. The monolithic construction ensures consistent thermal coupling between the two internal transistors.
Publicly confirmed substitute part numbers for the LS351 are not available in verified sources. Designers should consult official datasheets for equivalent devices offering similar hFE, Cobo, and VBE matching specifications. Cross-referencing with other manufacturers' super-beta dual transistor families may provide functional alternatives.