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Product Detailed Parameters
- Description：JFET 2N-CH 25V TO71
- Series：LS5912C
- Mfr：Linear Integrated Systems, Inc.
- Package：Bulk
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-71-6 Metal Can
- Supplier Device Package：TO-71
- Grade：-
- Qualification：-
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Overview
The LS5912C is a monolithic dual N-channel JFET amplifier designed as an improved replacement for legacy discrete devices. It features low noise with equivalent input voltage of 4 nV/√Hz at 10kHz and high transconductance exceeding 4000µS at 100MHz. The device supports a gate-to-source breakdown voltage of -25V and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a maximum power dissipation of 500mW, saturation current up to 40mA, and common mode rejection ratio of 85dB.
Feature Summary
- Monolithic dual N-channel JFET architecture providing integrated amplification
- Low noise performance optimized for precision signal processing applications
- High transconductance capability supporting wideband operation
- Enhanced matching characteristics including differential cutoff voltage and temperature stability
Applications
- Precision instrumentation front-ends
- Low noise audio preamplifiers
- Wideband signal conditioning circuits
- Sensor interface amplifiers
Procurement Notes
Verify the specific package configuration against the datasheet pinout diagrams, as multiple options exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure operating conditions remain within absolute maximum ratings to prevent serviceability impairment. Cross-reference part numbers carefully to distinguish between LS5911, LS5912, and LS5912C variants based on required electrical tolerances.
Selection Notes
Select this component when low noise and high bandwidth are critical requirements for dual JFET applications. The LS5912C offers superior transconductance compared to older discrete alternatives. Consider thermal derating requirements above 25°C due to the 4mW/°C limit. Evaluate matching specifications if differential circuit configurations are necessary for the design.
Part Context
Linear Integrated Systems manufactures the LS5912C as part of a family including LS5911 and LS5912. These devices serve as modern replacements for historical parts from Siliconix, Fairchild, and National Semiconductor. The company specializes in precision semiconductor components leveraging expertise from previous industry leaders.
Replacement Considerations
The LS5912C is documented as an improved replacement for SILICONIX, FAIRCHILD, and NATIONAL 2N5911 and 2N5912 devices. Verify pin compatibility and electrical parameter overlaps before substituting these legacy discrete JFETs.
