LS830 SOIC 8L

Overview

The LS830 is an ultra-low leakage, low drift monolithic dual N-channel JFET in an 8-SOIC package. It features a maximum drain-gate voltage of 10 V and a continuous drain current of 0.06 mA. The device supports a drain-source voltage of 40 V with a minimum forward transconductance of 7000 uS. Input capacitance is specified at 3 pF, and the power rating is 500 mW. Operating junction temperature ranges from -55°C to 150°C, with storage temperatures spanning -65°C to +150°C.

Feature Summary

• Ultra-low leakage characteristics for precision applications
• Low drift performance ensuring stable operation
• Monolithic dual N-channel JFET configuration

Applications

• Precision analog signal processing
• High-impedance input stages
• Low-leakage sample-and-hold circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the selected variant matches the required package style and thermal specifications for your design. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when ultra-low leakage and minimal drift are critical requirements for analog circuitry. The dual N-channel configuration offers flexibility in differential or balanced designs. Consider the 40 V drain-source voltage limit and 500 mW power dissipation constraints during thermal management planning.

Part Context

The LS830 series serves as a pin-for-pin replacement for legacy JFETs from manufacturers such as Fairchild, Motorola, and National Semiconductor. This compatibility facilitates direct upgrades in existing designs requiring improved leakage and drift performance without redesigning the PCB layout.

Replacement Considerations

The LS830 is documented as a pin-for-pin replacement for legacy devices from Fairchild, Motorola, and National Semiconductor. Verify electrical parameters against original parts to ensure compatibility.