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The LS842 SOIC 8L is a monolithic dual N-channel JFET manufactured by Linear Integrated Systems, Inc. It features a low-noise design with low drift and low capacitance characteristics. The device operates within a drain-source voltage range of 60 V and supports a continuous drain current of 0.5 mA. Maximum power dissipation is rated at 400 mW. Input capacitance is specified at 10 pF. The component utilizes an 8-SOIC surface-mount package with a width of 3.90 mm. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific ordering suffix matches the required package variant. Confirm that the manufacturer designation aligns with Linear Integrated Systems, Inc. documentation. Ensure the received components match the 8-SOIC physical dimensions. Check for RoHS compliance markings if environmental regulations apply. Validate part authenticity through authorized distribution channels.
Select this component when low input capacitance and high impedance are critical. Consider the 60 V drain-source limit for voltage headroom. Evaluate the 400 mW power dissipation against thermal constraints. Compare noise specifications against alternative JFETs for sensitive applications. Verify compatibility with surface-mount assembly processes.
This part belongs to the family of low-noise JFET amplifiers designed for precision linear applications. It serves as a discrete solution for differential or single-ended amplification stages. The dual configuration allows for matched pair operations in bridge circuits. It complements other linear integrated systems components in analog signal chains.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer cross-reference guides for verified alternatives. Ensure any replacement maintains matching electrical parameters and package footprint.