LS842 SOIC 8L

LS842 SOIC 8L

$8.48
  • Description:JFET 2N-CH 60V 8SOIC
  • Series:LS842

SKU:f1c7f46ba680 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET 2N-CH 60V 8SOIC
  • Series:LS842
  • Mfr:Linear Integrated Systems, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS):60 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):500 µA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:10pF @ 20V
  • Resistance - RDS(On):-
  • Power - Max:400 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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LS842 SOIC 8L

Overview

The LS842 SOIC 8L is a monolithic dual N-channel JFET manufactured by Linear Integrated Systems, Inc. It features a low-noise design with low drift and low capacitance characteristics. The device operates within a drain-source voltage range of 60 V and supports a continuous drain current of 0.5 mA. Maximum power dissipation is rated at 400 mW. Input capacitance is specified at 10 pF. The component utilizes an 8-SOIC surface-mount package with a width of 3.90 mm. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

  • Monolithic dual N-channel JFET architecture
  • Low noise and low drift performance
  • Low input capacitance for signal integrity

Applications

  • Precision analog signal amplification
  • Low-noise front-end circuits
  • High-impedance sensor interfaces

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the manufacturer designation aligns with Linear Integrated Systems, Inc. documentation. Ensure the received components match the 8-SOIC physical dimensions. Check for RoHS compliance markings if environmental regulations apply. Validate part authenticity through authorized distribution channels.

Selection Notes

Select this component when low input capacitance and high impedance are critical. Consider the 60 V drain-source limit for voltage headroom. Evaluate the 400 mW power dissipation against thermal constraints. Compare noise specifications against alternative JFETs for sensitive applications. Verify compatibility with surface-mount assembly processes.

Part Context

This part belongs to the family of low-noise JFET amplifiers designed for precision linear applications. It serves as a discrete solution for differential or single-ended amplification stages. The dual configuration allows for matched pair operations in bridge circuits. It complements other linear integrated systems components in analog signal chains.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer cross-reference guides for verified alternatives. Ensure any replacement maintains matching electrical parameters and package footprint.

LS842 SOIC 8LLS842 SOIC 8L
$8.48
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