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The LSK170D is a single N-channel JFET in a TO-92 3L package, designed for ultra-low noise and high input impedance applications. It features a gate-to-source breakdown voltage of -40V minimum and a typical transconductance of 22mS at 1kHz. The device exhibits an input noise voltage of 0.9nV/√Hz at 1kHz and 1.4nV/√Hz at 10Hz. Drain-to-source saturation current ranges from 18mA to 30mA with VDS=10V and VGS=0. Input capacitance is typically 20pF maximum. Continuous power dissipation is 400mW at +25°C.
Verify the specific grade suffix (A, B, C, or D) matches the required IDSS range for your circuit design. Confirm the package type is TO-92 3L as specified. Ensure RoHS compliance requirements are met by checking the ordering information section. Contact the manufacturer directly for custom specification selections or tighter noise tolerances not covered by standard grades.
Select the LSK170D when a higher drain-to-source saturation current range (18mA to 30mA) is required compared to other grades. This grade is suitable for applications needing specific biasing points within that current window while maintaining ultra-low noise characteristics. Consider the narrow IDSS range benefits for low-voltage portable battery-operated designs where consistent performance across units is critical.
The LSK170 series includes variants available in SOT-23, TO-92, and SOT-89 packages. The LSK170D specifically denotes the highest IDSS grade within this lineup. The series serves as an improved functional replacement for Interfet models IF1320, IF1330, IF1331, and IF4500. For monolithic-dual equivalent needs, the LSK389 series is referenced.
The datasheet confirms direct pin-for-pin replacement for Toshiba's 2SK170. It also lists improved functional replacements for Interfet IF1320, IF1330, IF1331, and IF4500. Verify electrical compatibility before substituting these older part numbers.
The typical input noise voltage is 1.4nV/√Hz at 10Hz.
Yes, the LSK170 series is designed as a direct pin-for-pin replacement for Toshiba's 2SK170.
The maximum continuous power dissipation is 400mW at +25°C.