RF Diode LXP1000-23-2/TR product image

LXP1000-23-2/TR

$3.96
  • Description:RF DIODE PIN 5V 250MW SOT-23-3
  • Series:-

SKU:12487a2f665c Category: Brand:

  
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LXP1000-23-2/TR is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 5V 250MW SOT-23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for LXP1000-23-2/TR

  • Description:RF DIODE PIN 5V 250MW SOT-23-3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):5V
  • Current - Max:5 mA
  • Capacitance @ Vr, F:0.28pF @ 5V, 1MHz
  • Resistance @ If, F:2.5Ohm @ 5mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for LXP1000-23-2/TR

LXP1000-23-2/TR

RF Diode Overview

The LXP1000-23-2/TR is a silicon PIN diode from Microchip Technology, packaged in an SOT-23-3 surface-mount format. It features a single series pair configuration with a maximum peak reverse voltage of 5V and a maximum forward current of 5 mA. The device dissipates up to 250 mW and operates within a temperature range of -55°C to 125°C. Key electrical characteristics include a capacitance of 0.28 pF at 5V reverse bias and 1 MHz frequency, alongside a resistance of 2.5 ohms at 5 mA forward current and 100 MHz frequency.

RF Diode Feature Summary

  • Non-hermetic plastic surface mount construction for compact integration
  • Single series pair PIN diode architecture optimized for RF signal control
  • Low capacitance performance suitable for high-frequency switching applications

RF Diode Applications

  • RF switch circuits requiring low insertion loss
  • Attenuator designs utilizing PIN diode variable resistance
  • Phase shifter implementations in microwave systems

RF Diode Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure that the non-hermetic nature of the EPSM package aligns with the environmental requirements of the target assembly process. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and current production status before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a low-capacitance PIN diode is required in a small SOT-23-3 footprint. The 5V reverse voltage rating defines the maximum operating limit for RF signals. Designers must account for the 2.5 ohm series resistance at 5 mA drive current when calculating insertion loss in attenuator or switch topologies. Verify thermal management capabilities given the 250 mW power dissipation limit in enclosed spaces.

RF Diode Part Context

This part belongs to the LXP1000 series of non-hermetic silicon PIN diodes manufactured by Microchip Technology. These devices are designed for surface-mount applications where space constraints are critical. The series offers consistent RF performance characteristics across various packaging options, providing engineers with standardized components for RF front-end modules and communication equipment.

RF Diode Replacement Considerations

Consult the official LXP1000-LXP1011 datasheet for confirmed substitute part numbers within the same product family. Verify pinout compatibility and electrical parameter equivalence before substituting any alternative components.

LXP1000-23-2/TRLXP1000-23-2/TR
$3.96
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