RF Diode LXS101-23-3 product image

LXS101-23-3

$4.77
  • Description:RF DIODE SCHOTTKY 8V 1A SOT23-3
  • Series:LSX

SKU:43409103b280 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

LXS101-23-3 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE SCHOTTKY 8V 1A SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for LXS101-23-3

  • Description:RF DIODE SCHOTTKY 8V 1A SOT23-3
  • Series:LSX
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Type:Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for LXS101-23-3

LXS101-23-3

RF Diode Overview

The LXS101-23-3 is a silicon Schottky diode manufactured by Microchip Technology, designed for surface-mount applications. It features a dual cathode common anode configuration within an SOT-23-3 package. The device supports a maximum continuous forward current of 1 A and dissipates up to 250 mW of power. It exhibits a capacitance of 1 pF at 0 V reverse bias and 1 MHz frequency. The component operates reliably across an extended temperature range from -55°C to +125°C.

RF Diode Feature Summary

  • Dual cathode common anode configuration for versatile circuit integration
  • Non-hermetic plastic surface-mount construction
  • High-speed switching capability with low junction capacitance

RF Diode Applications

  • RF signal detection and mixing circuits
  • Power supply rectification in compact designs
  • Protection diodes in high-frequency communication systems

RF Diode Procurement Notes

Verify the specific ordering suffix, such as /TR, which indicates tape-and-reel packaging, against your manufacturing requirements. Confirm that the non-hermetic plastic package meets environmental standards for your intended application. Ensure the SOT-23-3 footprint matches your PCB layout constraints before finalizing procurement.

RF Diode Selection Notes

Select this component when a dual-diode structure with a common anode is required in a minimal footprint. Consider the 1 A current rating and 250 mW power dissipation limits for thermal management. The wide operating temperature range makes it suitable for industrial or automotive environments where standard commercial parts may fail.

RF Diode Part Context

This part belongs to the LXS101 series of silicon Schottky diodes from Microchip Technology. These devices are engineered for high-efficiency rectification and switching in RF and microwave applications. The series offers various configurations and packages to accommodate different design constraints while maintaining consistent performance characteristics.

RF Diode Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameters such as forward voltage drop and reverse leakage current before substituting.

LXS101-23-3LXS101-23-3
$4.77
Buy Now