LXS301-23-0

RF Diode Overview

The LXS301-23-0 is a Schottky barrier diode from the LXS100 series, manufactured by Microchip Technology. It features a reverse breakdown voltage of 20 V at an IR of 10 μA and 8.0 V at an IR of 100 μA. The forward voltage ranges from 300 mV to 430 mV at IF = 1 mA. Junction capacitance is 1.4 pF at 0 V, measured at 1 MHz. Dynamic resistance is 15 Ω at IF = 5 mA. Power dissipation is rated at 250 mW, with an operating temperature range of -55 °C to +125 °C.

RF Diode Feature Summary

• RoHS compliant surface mount design in standard SOT-23 package
• Low junction capacitance for high-frequency signal processing
• Excellent conversion loss characteristics for RF applications

RF Diode Applications

• Mixers
• Detectors
• Limiters
• Sampling phase detectors
• Up/Down converters

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS compliance requirements for your manufacturing process. Ensure the tape and reel configuration matches automated assembly equipment specifications if applicable.

RF Diode Selection Notes

Select this component based on its 20 V reverse breakdown voltage and low capacitance profile suitable for RF mixer and detector circuits. Evaluate thermal management needs as power dissipation is limited to 250 mW. Compare dynamic resistance values against system impedance requirements to ensure optimal signal transfer efficiency.

RF Diode Part Context

This device belongs to the LXS100 series of general-purpose Schottky diodes. It serves as the RoHS-compliant successor to the LSS series. The part utilizes economical SOT-23 plastic packaging designed for high-volume commercial applications while maintaining state-of-the-art electrical performance.

RF Diode Replacement Considerations

The LXS series supersedes the LSS version. Verify compatibility with existing LSS components during redesigns.