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MA2SP0200L is listed in the RF Diode range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is RF DIODE PIN 60V 150MW SSMINI2F1. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA2SP0200L
- Description：RF DIODE PIN 60V 150MW SSMINI2F1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：60V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.5pF @ 1V, 1MHz
- Resistance @ If, F：2Ohm @ 10mA, 100MHz
- Power Dissipation (Max)：150 mW
- Operating Temperature：150°C (TJ)
- Package / Case：SC-79, SOD-523
- Supplier Device Package：SSMini2-F1
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA2SP0200L
RF Diode Overview
The MA2SP0200L is a silicon epitaxial planar PIN diode manufactured by Panasonic Industry, designed for high-frequency switching applications. It features a miniature SSMini2-F1 (SC-79/SOD-523) surface-mount package. Key electrical parameters include a maximum reverse voltage of 60V and a forward current rating of 100mA. The device dissipates up to 150mW with a junction temperature limit of 150°C. Terminal capacitance is 0.5pF at 1V/1MHz, while forward dynamic resistance is 2.0Ω at 10mA/100MHz.
RF Diode Feature Summary
- Small terminal capacitance suitable for high-frequency operation
- Low forward dynamic resistance for efficient signal switching
- Miniature surface-mount package design
RF Diode Applications
- High frequency switch circuits
- General electronic equipment
- Communications equipment
- Measuring instruments
RF Diode Procurement Notes
Verify the specific lifecycle status before procurement as this component may be discontinued or in maintenance phase. Confirm that the SSMini2-F1 package dimensions align with the target PCB footprint. Ensure compliance with RoHS Directive requirements if applicable to the final assembly environment.
RF Diode Selection Notes
Select this component when low terminal capacitance and small forward dynamic resistance are required for RF switching. Verify that the 60V reverse voltage and 100mA forward current ratings exceed the circuit's peak operating conditions. Consider the thermal constraints imposed by the 150mW power dissipation limit in the final enclosure.
RF Diode Part Context
This part belongs to the MA2SP02 series of silicon epitaxial planar PIN diodes. It is specifically engineered for high-frequency switching tasks within compact electronic designs. The product utilizes a standardized EIAJ SC-79 package format common in modern surface-mount technology workflows.
RF Diode Replacement Considerations
Check for direct substitutes within the MA2SP02 family. Verify pinout compatibility between Anode and Cathode terminals. Ensure replacement components match the 60V reverse voltage and 0.5pF capacitance specifications.
RF Diode FAQ
What is the terminal capacitance value?
The terminal capacitance is 0.5 pF measured at 1V reverse voltage and 1 MHz frequency.
What is the maximum junction temperature?
The maximum junction temperature is 150°C.
What package type does this diode use?
It uses the SSMini2-F1 package, which corresponds to EIAJ SC-79 and SOD-523 standards.
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