RF Diode MA4AGFCP910 product image

MA4AGFCP910

$5.87
  • Description:RF DIODE PIN 75V 50MW 2-FLIPCHIP
  • Series:-

SKU:a0cfabe7f9a5 Category: Brand:

  
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MA4AGFCP910 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 75V 50MW 2-FLIPCHIP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4AGFCP910

  • Description:RF DIODE PIN 75V 50MW 2-FLIPCHIP
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):75V
  • Current - Max:-
  • Capacitance @ Vr, F:0.021pF @ 10V, 1MHz
  • Resistance @ If, F:6Ohm @ 10mA, 10GHz
  • Power Dissipation (Max):50 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:2-SMD, No Lead
  • Supplier Device Package:2-FlipChip
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MA4AGFCP910

MA4AGFCP910

RF Diode Overview

The MA4AGFCP910 is an Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode designed for millimeter wave applications. It features a total capacitance of 0.021 pF maximum at -10V and 1MHz, with a series resistance of 6.0 ohms maximum at +10mA and 10GHz. The device supports a reverse voltage of -75V and dissipates up to 50mW. Operating temperatures range from -55°C to +125°C, with storage capabilities up to +150°C. Switching speed is specified at 2 nanoseconds.

RF Diode Feature Summary

  • Ultra-low capacitance design optimized for high-frequency isolation
  • Flip-chip construction on OMCVD epitaxial wafers for low parasitics
  • Silicon nitride passivation with polyimide scratch protection layer

RF Diode Applications

  • RF switch assemblies operating through millimeter wave frequencies
  • Phase shifter circuits requiring single-digit nanosecond switching
  • Microwave multi-throw switch assemblies where low series capacitance prevents input loading

RF Diode Procurement Notes

Verify the specific datasheet revision before procurement, as the document indicates preliminary status based on engineering tests or prototype measurements. Confirm that the gel pack packaging matches the required handling protocols for ESD-sensitive Class 0 devices during assembly.

RF Diode Selection Notes

Select this component when extremely low RC products are critical for maintaining VSWR in multi-port switch networks. Ensure the driving circuit can support the required forward current while respecting the absolute maximum ratings for junction temperature and dissipated power.

RF Diode Part Context

This part belongs to the AlGaAs Flip Chip PIN Diodes family, sharing structural similarities with the MA4AGP907 but differentiated by higher reverse voltage tolerance. Both utilize identical mechanical dimensions and mounting guidelines for substrate integration.

RF Diode Replacement Considerations

The MA4AGSBP907 is a solder-bumped version of the MA4AGP907. While mechanically compatible, verify electrical specifications against the MA4AGFCP910 datasheet to ensure adequate reverse voltage margins for the specific application.

MA4AGFCP910MA4AGFCP910
$5.87
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