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MA4E1317 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 7V. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA4E1317
- Description：RF DIODE SCHOTTKY 7V
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Bulk
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：7V
- Current - Max：-
- Capacitance @ Vr, F：0.06pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-65°C ~ 125°C (TJ)
- Package / Case：2-SMD
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA4E1317
RF Diode Overview
The MA4E1317 is a gallium arsenide flip chip Schottky barrier diode designed for high-frequency applications. It features low series resistance and low capacitance, enabling operation through millimeter wave frequencies up to 80 GHz. The device utilizes OMCVD epitaxial wafers for high uniformity and extremely low parasitics. Key electrical specifications include a typical junction capacitance of 0.020 pF at 0 V and 1 MHz, a total capacitance ranging from 0.030 to 0.060 pF, and a typical series resistance of 4 Ω at +10 mA. The forward voltage is typically 0.70 V at +1 mA, with a reverse breakdown voltage of 7.0 V at -10 µA.
RF Diode Feature Summary
- Flip chip configuration suitable for pick-and-place insertion
- Silicon nitride passivation with polyimide scratch protection
- High cutoff frequency supporting millimeter wave usage
RF Diode Applications
- Single and double balanced mixers in PCN transceivers and radios
- Police radar detectors
- Automotive radar detectors
RF Diode Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation before purchase. The standard package is a 100-piece Gel Pack (MADS-001317-1278HP). Confirm that the component meets all required environmental and handling standards for your assembly process.
RF Diode Selection Notes
Select this component when low parasitic capacitance and series resistance are critical for millimeter-wave mixer performance. Ensure the design accommodates the flip chip mounting style and adheres to the specified maximum operating temperature of +125°C.
RF Diode Part Context
This part belongs to the MA4Exxxx Series of GaAs Flip Chip Schottky Barrier Diodes. It is electrically equivalent to part number MADS-001317-1500, which allows for different soldering compatibility options such as Sn63/Pb37 or RoHS compliant solder.
RF Diode Replacement Considerations
The MADS-001317-1500 is an electrically equivalent alternative. Verify mounting compatibility if switching solders, as the original datasheet notes restrictions on tin-based solders for the standard MA4E1317.
RF Diode FAQ
What is the maximum incident power rating?
The absolute maximum ratings specify an incident LO power and RF power limit of +20 dBm.
How should the die be mounted?
The chips are designed to be inserted onto substrates with the junction side down using silver epoxy or non-tin based solder, or assembled junction side up with wire/ribbon bonds.
Is the device sensitive to static electricity?
Yes, the Schottky barrier diodes are ESD sensitive and classified as Class 0 devices, requiring proper ESD handling techniques.
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