RF Diode MA4E1338E1-1068T product image

MA4E1338E1-1068T

$0.77
  • Description:DIODE SCHOTTKY 8V 250MW SOT143
  • Series:MA4E1338

SKU:60f82dc7b253 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MA4E1338E1-1068T is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is DIODE SCHOTTKY 8V 250MW SOT143. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4E1338E1-1068T

  • Description:DIODE SCHOTTKY 8V 250MW SOT143
  • Series:MA4E1338
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - 2 Independent
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:30 mA
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MA4E1338E1-1068T

MA4E1338E1-1068T

RF Diode Overview

The MA4E1338E1-1068T is a silicon medium barrier Schottky diode from the MA4E1338 Series, manufactured by MACOM Technology Solutions. It features an 8 V reverse voltage rating and operates within a temperature range of -55 °C to +125 °C. The device supports a total power dissipation of 250 mW and a continuous forward current of 150 mA. Electrical specifications include a maximum forward voltage of 360 mV at 1 mA and 500 mV at 10 mA, with a maximum total capacitance of 1 pF at 0 V bias. The component is supplied in a surface mount plastic package on tape and reel for automated assembly.

RF Diode Feature Summary

  • Medium barrier silicon construction optimized for RF and microwave applications
  • Low profile surface mount plastic packaging suitable for automated pick and place assembly
  • Lead-free and RoHS compliant manufacturing process

RF Diode Applications

  • Mixer circuits operating from DC through 6 GHz
  • Detector and limiter circuits
  • Anti-parallel shunt power surge protection for 50 Ω and 75 Ω systems
  • Industrial, Scientific, and Medical (ISM) equipment

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package style and configuration. Confirm lead-free status and RoHS compliance requirements match project specifications. Ensure the selected variant aligns with the required single or series pair configuration before procurement.

RF Diode Selection Notes

Select this component for applications requiring medium barrier characteristics up to 6 GHz. Evaluate the 8 V reverse voltage breakdown and 250 mW power dissipation limits against circuit demands. Consider the low capacitance and forward voltage parameters for signal integrity in detector or mixer topologies.

RF Diode Part Context

This part belongs to the MA4E1338 Series of silicon medium barrier Schottky diodes. The series offers both single diode and series pair configurations across various small outline packages including SOT-23, SOT-323, SOD-323, and SC-79. These components are designed for high-volume surface mount production.

RF Diode Replacement Considerations

Direct substitutes within the same series include MA4E1338A1-1146T for single configurations and MA4E1338B1-1146T for series pairs in the SOT-323 package. Verify pinout compatibility and electrical tolerances when considering alternative package styles such as SOT-23 or SOD-323 variants.

MA4E1338E1-1068TMA4E1338E1-1068T
$0.77
Buy Now