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MA4E2054L-1261 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 75MW CHIP. Review the specifications below when checking this part for your BOM.
The MA4E2054L-1261 is a low barrier N-type silicon Schottky diode in the MA4E2054 series, designed for high-performance mixer and detector applications from VHF through X-band. It features a maximum total capacitance of 0.3 pF at 0 V bias and 1 MHz frequency. The device has a minimum breakdown voltage of 3.0 V at 10 µA reverse current and a maximum reverse leakage current of 100 nA at 1 V or 500 nA at 3 V. Operating temperature ranges from -65°C to +125°C.
Verify the specific package style and configuration suffix against the official MACOM datasheet before ordering. Confirm RoHS compliance status and tape and reel packaging requirements directly with the manufacturer or authorized distributors to ensure alignment with production specifications.
Select this component for RF applications requiring low capacitance and high sensitivity across VHF to X-band frequencies. Evaluate the single-ended versus balanced mixer requirements to determine if the single element or series pair configuration is necessary. Ensure the operating temperature range meets the system's environmental constraints.
This part belongs to the MA4E2054 series of surface mount low barrier Schottky diodes manufactured by MACOM Technology Solutions. The series includes various configurations such as single elements and series pairs housed in SOT-23, SOT-323, SOD-323, and SC-79 packages.
Consult the official MACOM datasheet for equivalent part numbers within the MA4E2054 series that match the required package style and wiring configuration.
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