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MA4E931Z2-1261A is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 75MW CHIP. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA4E931Z2-1261A
- Description：RF DIODE SCHOTTKY 3V 75MW CHIP
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky
- Voltage - Peak Reverse (Max)：3V
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：75 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：Die
- Supplier Device Package：Chip
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA4E931Z2-1261A
RF Diode Overview
The MA4E931Z2-1261A is a P-type Schottky Zero Bias Detector (ZBD) diode designed for microstrip or stripline detector circuits. It operates within an incident RF power range of up to 75 mW CW and withstands reverse voltages of 3 V at 25 °C. The device exhibits a minimum breakdown voltage of 3.0 V and a typical forward voltage of 150 mV. Tangential signal sensitivity reaches -52 dBm minimum with a 2 MHz bandwidth, while video impedance ranges from 2.5 kΩ to 4.5 kΩ. Voltage output is specified at a minimum of 5.0 mV under identical conditions.
RF Diode Feature Summary
- Operates without external DC bias
- Exhibits uniform Rv characteristics
- High voltage sensitivity
- Available in chip form (ODS-1261)
- RoHS Compliant and 260°C Reflow Compatible
RF Diode Applications
- Microstrip detector circuits
- Stripline detector circuits
- High volume low cost detector applications
RF Diode Procurement Notes
Verify RoHS compliance and 260°C reflow compatibility during procurement. Confirm ODS-1261 chip form factor availability. Ensure handling procedures accommodate the 0.004-inch gold bond pads for automatic assembly processes. Validate operating temperature range requirements against application needs.
RF Diode Selection Notes
Select this component when zero-bias detection is required in microwave frequencies. Consider its high voltage sensitivity and uniform Rv characteristics for consistent performance. Evaluate suitability for microstrip or stripline integration. Verify thermal management capabilities within the -65 to +150 °C operating range.
RF Diode Part Context
This part belongs to MACOM's Schottky diode portfolio, specifically engineered as a Zero Bias Detector. It complements other detector solutions by offering robust construction and compatibility with automated assembly lines. Its design focuses on delivering reliable performance in high-volume manufacturing environments.
RF Diode Replacement Considerations
No direct public substitute part numbers are documented for the MA4E931Z2-1261A. Evaluate alternative ZBD diodes based on matching electrical specifications, particularly breakdown voltage, tangential signal sensitivity, and package dimensions.
RF Diode FAQ
What is the maximum incident RF power the MA4E931Z2-1261A can handle?
The maximum continuous wave (CW) incident RF power is 75 mW.
Does the MA4E931Z2-1261A require an external DC bias?
No, it is a Zero Bias Detector (ZBD) diode and can be used without external DC bias.
What is the typical tangential signal sensitivity at 10.0 GHz?
The typical tangential signal sensitivity is -52 dBm minimum with a 2 MHz bandwidth and 3.5 dB video noise figure.
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