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MA4E932B-186 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is DIODE SCHOTTKY 7V 100MW ODS-186. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA4E932B-186
- Description：DIODE SCHOTTKY 7V 100MW ODS-186
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：7V
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：100 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：2-SMD, Flat Leads
- Supplier Device Package：ODS-186
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA4E932B-186
RF Diode Overview
The MA4E932B-186 is a silicon Schottky zero-bias detector diode manufactured by MACOM Technology Solutions. It operates in the ODS-186 surface-mount package and features a breakdown voltage of 1.0V, total capacitance of 0.25pF, and dynamic resistance of 40 ohms. The device supports a maximum DC current of 18,000A and handles up to 40mW power.
RF Diode Feature Summary
- Zero-bias detection capability for high-frequency signal processing
- Fast switching performance with low forward voltage drop
- Compact surface-mount design for efficient PCB integration
RF Diode Applications
- RF signal detection in communication systems
- High-frequency circuit monitoring
- Microwave receiver front-ends
RF Diode Procurement Notes
Verify the specific suffix -186 against official MACOM documentation to confirm package type and electrical tolerances. Ensure compatibility with existing RF circuit designs regarding capacitance and dynamic resistance parameters before finalizing procurement orders.
RF Diode Selection Notes
Select this component for applications requiring precise zero-bias detection without external power supply. Consider the 0.25pF capacitance and 40 ohm dynamic resistance for high-frequency signal integrity. Validate thermal and power handling limits within the target system environment.
RF Diode Part Context
This part belongs to MACOM’s portfolio of RF Schottky diodes designed for demanding microwave and millimeter-wave applications. It complements the company’s broader range of high-performance analog semiconductor solutions used in telecommunications and defense sectors.
RF Diode Replacement Considerations
Consult MACOM official substitution guides for equivalent zero-bias detector diodes. Verify pinout compatibility and electrical parameter alignment with alternative suppliers if direct replacement is necessary.
RF Diode FAQ
What is the breakdown voltage of the MA4E932B-186?
The breakdown voltage is specified as 1.0V.
Does the MA4E932B-186 require an external bias voltage?
No, it is a zero-bias detector diode designed to operate without external bias.
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