MA4L021-120

RF Diode Overview

The MA4L021-120 is a silicon PIN limiter diode from the MA4L series, packaged in the 120 ceramic pill style. It features gold-doped die for fast signal recovery and low flat leakage power. Key electrical parameters include a breakdown voltage of 20V to 35V, junction capacitance of 0.11 pF (max) at -10V reverse bias, and series resistance of 2.10 Ohms at 500 MHz. The device has a carrier lifetime of 10 ns, an I-region thickness of 2 mils, and a CW thermal resistance of 35 °C/W.

RF Diode Feature Summary

• Gold-doped silicon construction provides fast recovery times suitable for high peak power applications.
• Low insertion loss and noise figure characteristics ensure minimal signal degradation in passive limiter circuits.
• High peak and average operating power handling capabilities protect sensitive downstream components.

RF Diode Applications

• Passive limiter control circuits for receiver protection
• Protection of low noise amplifiers (LNA)
• Protection of detectors and mixers

RF Diode Procurement Notes

Verify the specific package suffix against the manufacturer's current ordering guide, as availability may vary between discrete chip and assembled ceramic styles. Confirm RoHS compliance status through official documentation prior to integration. Ensure design margins account for the absolute maximum ratings regarding junction temperature and forward current to prevent permanent damage during operation.

RF Diode Selection Notes

Select this component when fast recovery time is prioritized over ultra-low leakage, as indicated by the gold doping. Compare the 2.10 Ohm series resistance and 0.11 pF capacitance against circuit requirements for the target frequency range. Verify that the 120 package parasitics align with the impedance matching network design for optimal limiting performance.

RF Diode Part Context

This part belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes designed for high signal applications. The series offers various I-region lengths and doping options to balance recovery speed and leakage characteristics across different frequency bands up to 18 GHz.

RF Diode Replacement Considerations

MA4L021-134: Same base diode die but in ODS-134 chip outline format.

RF Diode FAQ

What is the primary difference between the gold-doped and non-gold-doped versions in this series?

Gold-doped devices, like the MA4L021-120, are optimized for lower carrier lifetime (10 ns) to achieve faster recovery times, whereas non-gold-doped variants offer lower flat leakage power at the cost of slower response.

How is the series resistance defined for this component?

The maximum series resistance (RS) of 2.10 Ohms is measured at 500 MHz and represents the total diode resistance, including both the chip junction resistance and the package ohmic resistance.