MA4L032-134

RF Diode Overview

The MA4L032-134 is a silicon PIN limiter diode die from the MA4L series, designed for high signal applications. It features gold doping to achieve lower carrier recovery time. The device provides low insertion loss at zero bias and fast signal response. Key electrical specifications include a breakdown voltage of 30 V minimum and 50 V maximum, a junction capacitance of 0.18 pF typical at 10 V reverse bias, and a series resistance of 2.50 Ohms nominal at 10 mA forward current. It has a carrier lifetime of 15 ns and an I-region thickness of 3 µm (1.5 mils). The chip operates within a temperature range of -55°C to +125°C.

RF Diode Feature Summary

• Gold-doped silicon construction optimized for fast signal recovery times in limiter circuits.
• Designed for passive limiter control to protect sensitive receiver components like LNAs and mixers.
• Provides low flat leakage power and low insertion loss at zero bias conditions.

RF Diode Applications

• Passive limiter control circuits for RF protection
• Protection of low noise amplifiers (LNA) in receiver front ends
• Protection of detectors and mixers across 10 MHz to 18 GHz frequency ranges

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm the package style. The base part number MA4L032 can be configured with various case styles such as ceramic pills or surface mount packages. Ensure the selected variant matches the required parasitic characteristics and mounting method for the intended circuit design.

RF Diode Selection Notes

Select this component when fast recovery time is prioritized over low flat leakage, as indicated by its gold-doped structure. Compare the 15 ns carrier lifetime and 2.50 Ohms series resistance against system requirements for limiting thresholds. Consider the 3 µm I-region thickness for appropriate power handling capabilities relative to other variants in the MA4L series.

RF Diode Part Context

This component belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes manufactured by MACOM Technology Solutions. These devices are engineered for high signal applications requiring small and medium I-region lengths. The series offers both gold-doped and non-gold-doped options to balance recovery speed and leakage performance.

RF Diode Replacement Considerations

MA4L031-134: Features similar dimensions but higher series resistance (2.00 Ohms) and longer carrier lifetime (20 ns). MADL-011010-01340W: Gold-doped alternative with identical electrical parameters including 2.50 Ohms RS and 15 ns lifetime.