MA4L401-134

RF Diode Overview

The MA4L401-134 is a silicon PIN limiter diode die from the MA4L series, designed for high signal applications. It features a non-gold doped construction to achieve low flat leakage power and fast signal response times. The device operates within the 10 MHz to 18 GHz frequency range. Key electrical specifications include a breakdown voltage of 250V minimum and 300V maximum at 10 µA, junction capacitance of 0.19 pF typical at 10 V reverse bias (1 MHz), and series resistance of 1.20 Ohms nominal at 500 MHz. High signal performance at 9.4 GHz includes a recovery time of 52 ns, 60 dBm incident peak power limiting, and 40.0 dBm CW input power limiting.

RF Diode Feature Summary

• Non-gold doped silicon construction optimized for low flat leakage power
• Fast signal response and recovery times suitable for high-power switching
• Small I-region length providing low insertion loss at zero bias

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers
• Protection of detectors and mixers in RF front ends

RF Diode Procurement Notes

Verify the specific package suffix when ordering, as the base part number MA4L401 supports multiple configurations including ceramic packages and flying leads. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Ensure handling procedures for semiconductor chips are followed to prevent damage from particulates or electrostatic discharge during assembly.

RF Diode Selection Notes

Select this component for applications requiring high peak power handling with minimal flat leakage. The non-gold doped variant is preferred over gold-doped versions when lower leakage is critical compared to faster recovery speed. Verify that the thermal resistance and junction temperature limits align with the system's operating environment and heat dissipation capabilities.

RF Diode Part Context

This component belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes manufactured by MACOM Technology Solutions. The series offers various I-region lengths and doping options to tailor performance for different high-signal requirements. The MA4L401 specifically represents a high-breakdown voltage option within the lineup.

RF Diode Replacement Considerations

MA4L101-134: Similar non-gold doped silicon limiter diode with lower breakdown voltage (100V min) but higher carrier lifetime (150 ns).

RF Diode FAQ

What is the difference between gold-doped and non-gold-doped devices in this series?

Gold-doped devices offer lower carrier lifetime for faster recovery times, while non-gold-doped devices like the MA4L401 provide lower flat leakage power.

How is the series resistance defined for this component?

Series resistance is measured at 500 MHz and includes both the chip junction resistance and the package ohmic resistance if packaged.

What is the recommended mounting method for the bare die?

The die can be mounted using gold-tin eutectic solder perform or conductive silver epoxy, ensuring the mounting surface has a flatness of less than ±2 mils.