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MA4P161-134 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 100V DIE. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA4P161-134
- Description：RF DIODE PIN 100V DIE
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Bulk
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：-
- Capacitance @ Vr, F：0.1pF @ 50V, 1MHz
- Resistance @ If, F：1.5Ohm @ 10mA, 500MHz
- Power Dissipation (Max)：-
- Operating Temperature：175°C (TJ)
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA4P161-134
RF Diode Overview
The MA4P161-134 is a silicon PIN diode chip designed for broadband control circuit applications. It features a reverse voltage rating of 100 VDC and a maximum capacitance of 0.10 pF at -10 V bias. The series resistance is 1.50 Ω at 500 MHz with a forward current of 10 mA. Carrier lifetime is nominally 15 µs, supporting fast switching speeds. The device utilizes an oxide passivated planar construction with dimensions of 13 x 13 mils and a thickness of 6.0 mils. It operates within a temperature range of -55°C to +175°C.
RF Diode Feature Summary
- Oxide passivated planar construction for low parasitic performance
- Fast switching speed suitable for high-frequency control circuits
- Hermetic glass passivation available in the broader product line
RF Diode Applications
- Broadband micro-strip hybrid assemblies
- RF switch circuits
- Attenuator circuits
RF Diode Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and electrical tolerances. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes before finalizing procurement orders.
RF Diode Selection Notes
Select this component when a low capacitance value near 0.10 pF is required alongside moderate power handling capabilities. Ensure the thermal management design accommodates the specified junction temperature limits and that the I-region length aligns with the desired carrier lifetime requirements for the target switching frequency.
RF Diode Part Context
This part belongs to MACOM's comprehensive line of silicon PIN/NIP diode chips. These devices are optimized to minimize parametric trade-offs between low capacitance, low series resistance, and breakdown voltage. The small physical size makes them ideal for integration into compact microwave and RF control modules.
RF Diode Replacement Considerations
Consult the manufacturer's cross-reference data for direct replacements. Verify that any substitute maintains equivalent capacitance, series resistance, and reverse voltage ratings to ensure circuit compatibility without redesigning the matching network.
RF Diode FAQ
What is the nominal carrier lifetime for the MA4P161-134?
The nominal carrier lifetime is 15 µs, specified at a forward current of +10 mA and a reverse current of -6 mA.
How is the reverse voltage defined for this component?
Reverse voltage is sourced such that the resultant reverse leakage current is measured to be less than 10 µA.
What metallization scheme is used on the die anode bond pads?
The die anode bond pads utilize a Ti-Pt-Au metallization scheme with a final gold thickness of 1.0 micron.
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