MA4P505-1072T

RF Diode Overview

The MA4P505-1072T is a silicon PIN diode housed in the ODS-1072 surface-mount package. It features a minimum reverse voltage of 500 V and a maximum capacitance of 0.65 pF at -10 V, 1 MHz. The device has a maximum series resistance of 0.45 Ω measured at 10 mA, 100 MHz. Nominal characteristics include a carrier lifetime of 2 µs and an I-region width of 50 µm. It supports a continuous wave power dissipation of 15 W at +25°C ambient temperature.

RF Diode Feature Summary

• Utilizes MACOM CERMACHIP passivation process for hermetic sealing and high reliability
• Designed for high power applications with high level RF voltages
• Available screened to meet MIL-STD requirements

RF Diode Applications

• High power RF circuits
• Switching control circuits
• Attenuator designs

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package style and screening levels. Confirm RoHS compliance status and any military screening options directly with the manufacturer or authorized distributors before procurement.

RF Diode Selection Notes

Select this component for applications requiring high reverse voltage handling and low parasitic capacitance in a surface-mount form factor. Ensure thermal management meets the specified power dissipation limits. Verify that the package parasitic capacitance aligns with circuit requirements when using alternative package styles.

RF Diode Part Context

This part belongs to the MACOM Packaged PIN Diodes family, which offers a broad range of electrical characteristics and package outlines. The series combines semiconductor technology with chip packaging to provide flexibility for circuit designers in RF and microwave applications.

RF Diode Replacement Considerations

Consult the Package Availability Table in the datasheet for base part number compatibility. Alternative package styles such as 36 or 255 are available for the MA4P505 base chip, but total capacitance will vary due to different package parasitics.