MA4P505-255

RF Diode Overview

The MA4P505-255 is a silicon PIN diode from MACOM's high-voltage line, housed in the ODS-255 ceramic package. It features a minimum reverse voltage of 500 V and a maximum capacitance of 0.65 pF at -10 V (1 MHz). The device has a maximum series resistance of 0.45 Ω at 100 mA (100 MHz), a nominal carrier lifetime of 2 µs, and an I-region width of 50 µm. It utilizes CERMACHIP passivation for hermetic sealing and supports operation between -65°C and +175°C.

RF Diode Feature Summary

• Hermetically sealed construction using CERMACHIP glass encapsulation to protect the active chip area under high RF voltage conditions.
• High power handling capability with robust thermal dissipation characteristics suitable for stringent electrical environments.
• Fast switching performance enabled by controlled carrier lifetime and thin I-region design.

RF Diode Applications

• High power RF microwave circuits
• Control circuit applications requiring consistent performance
• Military screened applications

RF Diode Procurement Notes

Verify the specific ordering suffix against the Package Availability Table to confirm the ODS-255 case style. Ensure that the required screening levels, such as MIL-STD-750 Groups B and C, are explicitly requested if military qualification is needed. Confirm RoHS compliance status with the manufacturer prior to finalizing procurement orders.

RF Diode Selection Notes

Select this component when a 500 V reverse voltage rating is required alongside low parasitic capacitance. The ODS-255 package provides a total capacitance of 0.30 pF; calculate total system capacitance by adding this value to the chip junction capacitance. Verify that the thermal resistance and power dissipation limits align with the application's operating temperature range.

RF Diode Part Context

This part belongs to the MA4P50x series of packaged PIN diodes designed for high voltage applications. It shares the base semiconductor die with variants like MA4P505-36 and MA4P505-1072T, differing only in the mechanical package outline and associated parasitic parameters defined in the datasheet tables.

RF Diode Replacement Considerations

Direct substitutes include other MA4P505 variants such as MA4P505-36 or MA4P505-1072T, provided the package style change is acceptable. Alternative packages will alter the total capacitance due to different parasitic values listed in the Package Parasitic Capacitance table.