MA4P604-255

RF Diode Overview

The MA4P604-255 is a packaged silicon PIN diode from MACOM, utilizing the ODS-255 case style. It features a minimum reverse voltage of 1000 V and a maximum capacitance of 0.50 pF at -10 V (1 MHz). The device has a maximum series resistance of 1.0 Ω measured at 10 mA forward current (500 MHz). Nominal characteristics include a carrier lifetime of 3 µs and an I-region width of 95 µm. It is designed for high power applications with hermetic sealing.

RF Diode Feature Summary

• Hermetically sealed CERMACHIP design providing hard glass encapsulation
• High inherent reliability suitable for stringent electrical conditions
• Available screened to meet MIL-STD requirements

RF Diode Applications

• High power RF microwave circuits
• Hybrid integrated circuits
• Control circuit applications requiring consistent performance

RF Diode Procurement Notes

Verify the specific package style availability before ordering, as specifications vary by case. Confirm if military screening is required for your application. Check the datasheet for soldering temperature limits appropriate for the ODS-255 package. Ensure the operating environment stays within the specified thermal resistance parameters.

RF Diode Selection Notes

Select this component when a 1000 V rating and low capacitance are necessary. The 95 µs carrier lifetime suits moderate speed switching. Compare against other base part numbers in the MA4P60x series if different package styles or parasitic capacitances are needed. Verify that the ODS-255 package fits the board layout constraints.

RF Diode Part Context

This part belongs to the MA4P604 base series, which offers 1000 V breakdown. The suffix 255 indicates the ODS-255 ceramic package. Other packages like 30 or 258 are available for the same chip but will have different total capacitance values due to varying parasitic contributions.

RF Diode Replacement Considerations

MA4P604-30 and MA4P604-258 are confirmed substitutes using the same semiconductor chip. They differ only in package style and associated parasitic capacitance. Verify that the alternative package meets the mechanical and thermal requirements of the original design.