MA4P7102F-1072T

RF Diode Overview

The MA4P7102F-1072T is a high-power silicon PIN diode from the MACOM MA4P MELF & HIPAX series, designed for switch and attenuator applications. It features a fully passivated chip with low reverse bias leakage current and full face bonding to metal pins on both anode and cathode. The device operates within a junction temperature range of -55°C to +175°C. Key electrical specifications include a maximum DC reverse voltage (VR) of 200 VDC, a maximum total capacitance (CT) of 1.0 pF at 100 V, and a maximum series resistance (RS) of 0.5 Ω at 100 mA forward current. It offers a minimum parallel resistance (RP) of 100 kΩ at 100 V reverse bias and a minimum carrier lifetime (TL) of 2.5 µs at 10 mA forward current. The maximum forward voltage (VF) is 1.0 V at 100 mA. Power dissipation is rated at 11.5 W with a thermal resistance (θJC) of 13°C/W under infinite heatsink conditions.

RF Diode Feature Summary

• High power handling capability suitable for RF switching and attenuation
• Low distortion performance due to thick I-region and long carrier lifetime
• Passivated chip construction ensuring extremely low reverse bias leakage current
• Leadless low inductance MELF package design for surface mount assembly

RF Diode Applications

• Low distortion attenuators
• Surface mount switches
• Cellular radio antenna switches

RF Diode Procurement Notes

Verify the specific part number against official MACOM documentation to confirm electrical parameters and package style. Ensure compliance with RoHS requirements if applicable. Check for non-magnetic variants if MRI compatibility is required. Confirm tape and reel quantities match production needs. Validate soldering profiles using standard industry processes compatible with tin-plated surfaces.

RF Diode Selection Notes

Select this component when high power handling and low distortion are critical for RF switch or attenuator designs. Consider the 200V reverse voltage rating and 11.5W power dissipation for appropriate thermal management. Evaluate the 1.0pF capacitance and 0.5Ω series resistance for frequency response requirements. Compare with other MA4P series variants based on specific voltage, resistance, and capacitance needs.

RF Diode Part Context

The MA4P7102F-1072T belongs to the MACOM MA4P MELF & HIPAX series of high-power PIN diodes. This series utilizes silicon technology with fully passivated chips enclosed in rugged ceramic packages. The 'F' suffix indicates a MELF surface mount package, while '1072' denotes the specific case style. These devices are characterized by symmetrical thermal paths and low thermal resistance due to full face chip bonding.

RF Diode Replacement Considerations

Direct substitutes within the same series include MA4P7101F-1072T (100V VR) and MA4P7104F-1072T (400V VR). Verify that replacement parts match the required reverse voltage, series resistance, and capacitance specifications for the specific application.