MA4P7104B-401T

RF Diode Overview

The MA4P7104B-401T is a high-power silicon PIN diode from the MACOM MELF and HIPAX series, designed for switch and attenuator applications. It features a fully passivated chip with low reverse bias leakage current and long carrier lifetime. The device utilizes full face chip bonding to metal pins on both anode and cathode, resulting in low thermal resistance due to symmetrical thermal paths. Rated for a maximum DC reverse voltage of 400 VDC, it offers a typical total capacitance of 1.0 pF at 100 V reverse bias and a maximum series resistance of 0.5 Ω at 100 mA forward current. The component operates within a junction temperature range of -55°C to +175°C.

RF Diode Feature Summary

• High power handling capability suitable for applications above 1 kW CW
• Low loss and low distortion performance
• Passivated chip construction for extremely low reverse bias leakage current
• Leadless low inductance MELF packages available alongside axial leaded options

RF Diode Applications

• Low distortion attenuators
• Surface mount switches
• Cellular radio antenna switches

RF Diode Procurement Notes

Verify the specific package style and ordering suffix when sourcing. The 'B' designation indicates an axial leaded HIPAX package, while the 'T' suffix denotes tape and reel packaging availability. Confirm RoHS compliance status and ensure the selected variant matches the required non-magnetic or magnetic specifications for the intended environment.

RF Diode Selection Notes

Select this component for circuits requiring high reverse voltage ratings up to 400 VDC combined with low insertion loss. The 401 package style provides axial leads suitable for through-hole mounting or specific surface mount configurations. Ensure the design accounts for the specified thermal resistance values and maximum power dissipation limits under continuous wave operation conditions.

RF Diode Part Context

This part belongs to the MA4P7100 series within the broader MA4P MELF & HIPAX family. It shares common design characteristics such as thick I-region semiconductor technology and full face chip bonding with other members like the MA4P7101B-401T. The series is engineered to maintain low series resistance and capacitance values while supporting high power levels.

RF Diode Replacement Considerations

MA4P7101B-401T

RF Diode FAQ

What is the maximum DC reverse voltage rating for the MA4P7104B-401T?

The maximum DC reverse voltage (VR) rating for this component is 400 VDC.

How does the package style affect the thermal performance?

The device uses full face chip bonding to metal pins on both anode and cathode, creating symmetrical thermal paths that result in low thermal resistance.

Is the MA4P7104B-401T available in a non-magnetic version?

The datasheet lists the MA4P7104F-1072T as the corresponding MELF package option; however, specific non-magnetic variants are typically indicated by the 'NM' suffix in the base part number for applicable models in this series.