MA4P7441F-1091T

RF Diode Overview

The MA4P7441F-1091T is a surface-mountable PIN diode in a non-magnetic rectangular MELF SMQ ceramic package. It incorporates HIPAX technology for low inductance and hermetic sealing. The device features full-face bonding to minimize electrical and thermal resistance, supporting RF power incident levels up to 200 watts CW. Electrical specifications at +25 °C include a maximum forward voltage of 1.0 VDC at +100 mA, a minimum voltage rating of -100 VDC, and a maximum total capacitance of 2.2 pF at -100 V bias. Absolute maximum ratings specify a continuous junction temperature of +175 °C, an operating temperature range from -65 °C to +125 °C, and a maximum RF C.W. incident power of +53 dBm.

RF Diode Feature Summary

• Non-magnetic package suitable for MRI applications
• Rectangular MELF SMQ ceramic package with hermetic sealing
• Lower series resistance for reduced series loss
• Extended carrier lifetime for lower intermodulation distortion

RF Diode Applications

• Low loss switching circuits in high magnetic field environments
• Low distortion RF switching from HF through UHF frequencies
• High power switching circuits requiring high average incident power handling

RF Diode Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm packaging configuration. Ensure that environmental screening requirements align with intended industrial or military standards before procurement. Confirm compatibility with automated assembly processes utilizing key jaw or vacuum pickup techniques.

RF Diode Selection Notes

Select this component for applications requiring non-magnetic characteristics in high-field environments. Evaluate thermal resistance and power dissipation capabilities against system heat management constraints. Compare electrical parameters such as carrier lifetime and capacitance against circuit requirements for optimal signal integrity and isolation performance.

RF Diode Part Context

This device belongs to the MA4P7441F series of non-magnetic PIN diodes manufactured by M/A-COM Technology Solutions Inc. It utilizes HIPAX technology to provide a low-inductance, hermetically sealed ceramic package without ribbons or whisker wires. The design ensures repeatable and predictable performance characterized both electrically and mechanically.

RF Diode Replacement Considerations

The datasheet notes that the MA4P7441F-1091T has similar electrical performance to the MA4P4001F-1091T magnetic part number. Verify magnetic property differences when substituting between these specific models.

RF Diode FAQ

What is the nominal I-region length of the MA4P7441F-1091T?

The nominal I-region length is 175 µm.

How does the MA4P7441F-1091T compare magnetically to conventional devices?

It exhibits significantly lower saturation moment, remanence moment, and coercivity compared to conventional magnetic devices like the MA4P4001F-1091T.

What soldering methods are compatible with this device?

All solderable surfaces are tin plated and compatible with reflow and vapor phase soldering methods.