Diode Arrays MA4X72400L product image

MA4X72400L

$0.49
  • Description:DIODE ARR SCHOTT 30V 200MA MINI4
  • Series:-

SKU:c6b0736e41c9 Category: Brand:

  
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MA4X72400L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARR SCHOTT 30V 200MA MINI4. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA4X72400L

  • Description:DIODE ARR SCHOTT 30V 200MA MINI4
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):200mA
  • Voltage - Forward (Vf) (Max) @ If:550 mV @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):3 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 30 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:Mini4-G1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA4X72400L

MA4X72400L

Diode Arrays Overview

The MA4X72400L is a silicon epitaxial planar Schottky barrier diode designed for super high-speed switching and small current rectification. It contains two isolated elements in one package, allowing high-density mounting. The device supports an average forward current of 200 mA per element and withstands a repetitive peak reverse voltage of 30 V. Key electrical characteristics include a typical forward voltage of 0.55 V at 200 mA, a maximum reverse current of 50 µA at 30 V, and a terminal capacitance of 30 pF at 1 MHz. The junction temperature rating reaches 150 °C.

Diode Arrays Feature Summary

  • Contains two isolated Schottky barrier elements within a single package to enable high-density circuit mounting.
  • Utilizes silicon epitaxial planar technology optimized for super high-speed switching applications.

Diode Arrays Applications

  • Super high-speed switching circuits
  • Small current rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and lifecycle status. Check the Panasonic semiconductor maintenance and discontinuation pages for the most up-to-date product availability information before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when dual isolated Schottky diodes are required in a compact form factor. Ensure the design accommodates the 30 V reverse voltage limit and 200 mA average forward current per element. Consider the 30 pF terminal capacitance for high-frequency signal integrity requirements.

Diode Arrays Part Context

This part belongs to the MA4X724 series of silicon epitaxial planar Schottky barrier diodes manufactured by Panasonic Electronic Components. The series is engineered specifically for applications demanding rapid switching speeds and efficient rectification of small currents within space-constrained electronic designs.

Diode Arrays Replacement Considerations

The datasheet indicates that the MA3X721 (MA721) is contained in one package of the same direction as a type within the same family. Verify compatibility with these related parts based on specific circuit configuration needs.

Diode Arrays FAQ

What is the internal connection configuration of the MA4X72400L?

The device contains two isolated elements within one package. Pin 1 and Pin 2 serve as Cathodes 1 and 2, while Pin 3 and Pin 4 serve as Anodes 2 and 1 respectively.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 1 A for a single element and 0.75 A for double elements used simultaneously.

How does the reverse current vary with ambient temperature?

The reverse current increases significantly with higher ambient temperatures. At VR = 30 V, the reverse current rises from approximately 50 µA at 25°C to over 10^4 µA at 150°C.

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