MADL-011052-14280W

RF Diode Overview

The MADL-011052-14280W is a non-gold doped silicon PIN limiter diode die designed for high signal applications. It features an I-region thickness of 2 µm (2 mils) and a contact diameter of 2.6 x 5.8 mm. Electrical specifications include a breakdown voltage range of 20V to 40V, typical junction capacitance of 0.19 pF at 0V reverse bias, and maximum series resistance of 2.0 Ohms at 500 MHz. The device exhibits a carrier lifetime of 23 ns and a CW thermal resistance of 36°C/W. Nominal performance at 9.4 GHz indicates a recovery time of 7 ns, with incident peak power limiting levels of 50 dBm at 10 dB and 15 dB attenuation.

RF Diode Feature Summary

• Non-gold doped silicon construction optimized for low flat leakage power
• Fast signal response and recovery times suitable for high signal environments
• Silicon nitride passivation ensuring proven reliability

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers
• Protection of detectors and mixers in the 10 MHz to 18 GHz frequency range

RF Diode Procurement Notes

Verify the specific package suffix against the manufacturer's current ordering guide, as availability varies between chip, flying leads, and ceramic packages. Confirm RoHS compliance status and ensure handling procedures strictly follow the provided application notes to prevent metallization damage during assembly.

RF Diode Selection Notes

Select this non-gold doped variant when minimizing flat leakage power is critical compared to gold-doped alternatives. Evaluate the 2.0 Ohm series resistance and 23 ns carrier lifetime against system requirements for insertion loss and recovery speed. Ensure the 2.6 x 5.8 mm rectangular contact dimensions fit the intended microstrip or ground plane layout.

RF Diode Part Context

This component belongs to the MACOM MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices utilize small and medium I-region lengths to deliver low insertion loss at zero bias while maintaining robust power handling capabilities across microwave frequencies.

RF Diode Replacement Considerations

MADL-011054-0113W0

RF Diode FAQ

What distinguishes the MADL-011052-14280W from gold-doped variants?

It is a non-gold doped device specifically engineered to provide lower flat leakage power, whereas gold-doped versions prioritize faster recovery times.

How is the DC return provided in the standard test configuration?

In the single shunt diode configuration described in the datasheet, a shunt coil provides the DC return path.

What are the recommended mounting methods for this die?

The die can be mounted using gold-tin eutectic solder perform, conductive silver epoxy, or via thermo-compression wedge bonding for the top contact.