MADL-011088-DIE

RF Diode Overview

The MADL-011088-DIE is an integrated AlGaAs PIN diode limiter designed for X-band applications operating from 6 to 12 GHz. It features DC decoupling at both input and output ports, allowing operation with or without external DC bias. The device handles up to 39 dBm of incident CW power at room temperature. Key electrical specifications include a typical insertion loss of 0.35 dB at zero bias and ultra-low flat leakage power of less than 14 dBm when biased at 0.7 V. The component is supplied as a die in a gel pack with dimensions of 1.78 x 0.98 mm.

RF Diode Feature Summary

• Integrated AlGaAs PIN diode limiter architecture
• DC decoupled input and output ports
• Low flat leakage power capability under bias
• Compact bare die form factor

RF Diode Applications

• ISM/MM bands
• Radar systems
• Electronic Warfare (EW)

RF Diode Procurement Notes

Verify the specific revision status and RoHS compliance details directly with MACOM Technology Solutions Inc. prior to procurement. Confirm that the gel pack packaging meets your handling requirements for bare die components. Ensure all ordering suffixes match the exact functional configuration required for your design implementation.

RF Diode Selection Notes

Select this component for X-band designs requiring compact integration of limiting functionality. Evaluate thermal management strategies carefully, as the maximum junction temperature rating is +150°C. Consider the impact of external DC bias voltage on insertion loss and leakage performance characteristics during the circuit simulation phase.

RF Diode Part Context

This part belongs to MACOM's portfolio of X-band semiconductor solutions. It utilizes AlGaAs PIN diode technology specifically optimized for high-frequency limiting applications. The die format allows for flexible integration into custom microwave assemblies and hybrid circuits.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

RF Diode FAQ

What is the maximum incident CW RF power rating?

The device can limit up to 39 dBm incident CW power at room temperature.

How does DC bias affect the insertion loss?

Grounding the DC bias achieves low insertion loss, typically 0.35 dB up to 12 GHz. Applying a DC bias up to 0.7 V increases the insertion loss slightly but significantly reduces leakage power.

What are the recommended handling procedures for this die?

Die should primarily be handled with vacuum pickup tools or alternatively with plastic tweezers due to the protective polymer coating on the active areas.