RF Diode MADP-000422-12950P product image

MADP-000422-12950P

$5.70
  • Description:RF DIODE PIN 200V 1.8W DIE
  • Series:MADP000422 Surmount™

SKU:07fca36b3f22 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MADP-000422-12950P is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 200V 1.8W DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MADP-000422-12950P

  • Description:RF DIODE PIN 200V 1.8W DIE
  • Series:MADP000422 Surmount™
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):200V
  • Current - Max:250 mA
  • Capacitance @ Vr, F:0.5pF @ 0V, 1MHz
  • Resistance @ If, F:3.1Ohm @ 10mA, 1GHz
  • Power Dissipation (Max):1.8 W
  • Operating Temperature:175°C (TJ)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MADP-000422-12950P

MADP-000422-12950P

RF Diode Overview

The MADP-000422-12950P is a silicon-glass PIN diode chip from the MA4SPS42X series, utilizing MACOM's patented HMIC process. It features two silicon pedestals embedded in low-loss glass with selective backside metallization for surface mount assembly. The device provides exceptional heat transfer and includes silicon nitride passivation with polymer scratch protection. Key electrical specifications include a maximum reverse voltage of -200V, forward current of 250mA, and dissipated power of 1.8W. At 0V and 1MHz, total capacitance (CT) ranges from 0.340pF to 0.500pF, while series resistance (RS) at +10mA and 1GHz is between 3.100Ω and 6.200Ω.

RF Diode Feature Summary

  • SURMOUNT construction with rugged silicon-glass architecture
  • Low parasitic inductance and excellent RC constant
  • Silicon nitride passivation with polymer scratch protection
  • No wire bonding required

RF Diode Applications

  • Series, shunt, or series-shunt switches
  • Moderate incident power applications (10W C.W.)
  • Higher incident peak power applications (500W)

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before purchase. Confirm that the component meets all environmental compliance requirements relevant to your region. Ensure handling procedures adhere to electrostatic discharge guidelines during storage and assembly.

RF Diode Selection Notes

Select this component when high average and peak power handling capabilities are required alongside low parasitic inductance. The vertical topology offers superior thermal performance compared to plastic counterparts. Evaluate the trade-off between series resistance and capacitance based on the specific frequency and bias conditions of the target circuit design.

RF Diode Part Context

This part number corresponds to the MA4SPS422 die packaged in tape and reel format. It belongs to the MA4SPS42X series, which also includes the MA4SPS421 variant. Both devices share identical outline dimensions but differ in electrical characteristics such as capacitance and series resistance values.

RF Diode Replacement Considerations

The MA4SPS421 serves as a functional alternative within the same series. Verify compatibility by comparing specific electrical parameters like total capacitance and series resistance against the original design requirements.

MADP-000422-12950PMADP-000422-12950P
$5.70
Buy Now