MADP-011028-14150T

RF Diode Overview

The MADP-011028-14150T is a high-power PIN diode designed for broadband RF applications spanning 50 MHz to 12 GHz. It features a lead-free 1.5 x 1.2 mm 6-lead TDFN surface mount package with NiPdAuAg plating. The device provides peak power handling exceeding 100 W and maintains a thermal resistance of less than 35°C/W. Electrical specifications include a maximum reverse voltage of -200 V, a typical total capacitance of 0.24 pF at -50 V, and a series resistance of 3.4 Ω at +10 mA. Operating temperatures range from -65°C to +125°C.

RF Diode Feature Summary

• Broadband frequency operation from 50 MHz to 12 GHz
• High peak power handling capability exceeding 100 W
• Low thermal resistance for efficient heat dissipation
• Lead-free construction compliant with RoHS standards

RF Diode Applications

• Higher incident power switches
• Phase shifters
• Attenuators
• Limiter microwave circuits

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration. The standard reel quantity consists of 3000 pieces. Confirm that the component meets all required environmental and material compliance standards before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring high power handling and broad bandwidth up to 12 GHz. Ensure the PCB layout accommodates the 1.5 x 1.2 mm TDFN package dimensions and provides adequate thermal grounding for the exposed paddle.

RF Diode Part Context

This part belongs to MACOM's portfolio of high-power PIN diodes intended for microwave circuit applications. It utilizes a shunt structure suitable for broadband switching and limiting functions where high incident power tolerance is critical.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.