MADP-042305-130600

RF Diode Overview

The MADP-042305-130600 is a silicon glass PIN diode surmount chip from the MADP-042XX5 series, fabricated using MACOM's HMIC process. It features two silicon pedestals embedded in low-loss glass with selective backside metallization for surface mount attachment. Electrical specifications at +25°C include a typical capacitance of 0.14 pF at -10 V and 1 GHz, and a typical series resistance of 1.32 Ω at +20 mA and 1 GHz. The device supports an absolute maximum reverse voltage of -80 V and forward current of 250 mA, with a CW thermal resistance of 145 °C/W.

RF Diode Feature Summary

• Surface mount packageless design utilizing rugged silicon-glass construction
• Vertical topology providing exceptional heat transfer capabilities
• Low parasitic inductance and capacitance for high-frequency switching
• Encapsulated with silicon nitride and polymer layers for protection

RF Diode Applications

• Moderate incident power applications up to 10 W CW
• Higher frequency switch elements requiring low parasitics
• Peak power handling scenarios with pulse widths ≤1 μs

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm packaging configuration. The '0' suffix typically indicates gel pack tape and reel, while the 'P' suffix denotes pocket tape. Confirm RoHS compliance status and ensure ESD control techniques are applied during handling due to static sensitivity.

RF Diode Selection Notes

Select this component for applications requiring low parasitic inductance and high average power handling. Compare the typical capacitance and series resistance values against circuit requirements at the operating frequency. Ensure the thermal resistance rating aligns with the expected CW incident power dissipation limits defined in the absolute maximum ratings.

RF Diode Part Context

This part belongs to the MADP-042XX5-13060 series of SURMOUNT PIN diodes. Other variants in the series include MADP-042405, MADP-042505, and MADP-042905, which offer different electrical characteristics such as varying capacitance and resistance levels while sharing the same physical package outline.

RF Diode Replacement Considerations

Direct substitutes within the same series include MADP-042305-13060P, which shares identical electrical specifications but differs in packaging format. Verify that any alternative component matches the ODS-1306 style dimensions and HMIC process characteristics for compatibility.

RF Diode FAQ

What is the typical capacitance of the MADP-042305-130600 at 1 GHz?

The typical capacitance is 0.14 pF when measured at -10 V and 1 GHz.

How is the device protected during handling and assembly?

The topside is fully encapsulated with silicon nitride and includes an additional polymer layer to provide moisture, scratch, and impact protection for the junction and anode air-bridge.

What is the recommended mounting temperature limit?

The maximum mounting temperature is +280°C for a duration of 10 seconds.