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The MADR-010574-TR1000 is a gate driver designed for high-power PIN diode switching applications. It operates with a supply voltage of 3 V and supports reverse bias voltages ranging from 20 V to 250 V. The device provides a sink current of 200 mA and a source current of 0 mA, featuring a propagation delay of less than 8 µs (8000 ns) and rise/fall times of approximately 2000 ns. Packaged in a lead-free 7 mm PQFN-16LD surface-mount format, it is supplied in tape and reel quantities of 1000 units.
Verify the specific ordering suffix to confirm packaging configuration, as the -TR1000 designation indicates tape and reel packaging suitable for high-volume manufacturing. Ensure compatibility with the target PIN diode's voltage and current requirements before procurement. Confirm RoHS compliance and lead-free status if required by assembly specifications. Check datasheet for thermal performance within the specified operating temperature range.
Select this component when driving high-voltage PIN diodes requiring precise control via standard CMOS logic levels. The integrated level converter simplifies interface design by eliminating external translation circuitry. Consider the trade-off between static power consumption and switching speed, as higher speeds may require increased quiescent current. Verify that the 200 mA sink capability meets the peak drive requirements of the connected diode array.
This part belongs to MACOM's gate driver family specifically engineered for RF and microwave switching applications. It complements MACOM's portfolio of high-power PIN diodes by providing optimized drive signals. The PQFN-16LD package offers a compact footprint for space-constrained designs while maintaining robust electrical performance for high-voltage switching tasks.
Public confirmed substitute part numbers are not available in the provided documentation.