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MADS-001317-1278HP is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 7V CHIP. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MADS-001317-1278HP
- Description：RF DIODE SCHOTTKY 7V CHIP
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：7V
- Current - Max：-
- Capacitance @ Vr, F：0.06pF @ 0V, 1MHz
- Resistance @ If, F：7Ohm @ 10mA, 1MHz
- Power Dissipation (Max)：-
- Operating Temperature：-65°C ~ 125°C
- Package / Case：Die
- Supplier Device Package：Chip
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MADS-001317-1278HP
RF Diode Overview
The MADS-001317-1278HP is a Gallium Arsenide (GaAs) flip chip Schottky barrier diode belonging to the MA4E1317 series. It features low series resistance, low capacitance, and high cutoff frequency suitable for millimeter wave applications up to 80 GHz. The device includes silicon nitride passivation and polyimide scratch protection. Electrical specifications at +25°C include a typical junction capacitance of 0.020 pF, total capacitance of 0.045 pF, series resistance of 4 Ω, forward voltage of 0.70 V, and reverse breakdown voltage of 7.0 V.
RF Diode Feature Summary
- Flip chip configuration designed for easy circuit insertion via pick-and-place equipment
- Silicon nitride passivation with polyimide scratch protection layer
- High cutoff frequency enabling operation through millimeter wave frequencies
RF Diode Applications
- Single and double balanced mixers in PCN transceivers and radios
- Police radar detectors
- Automotive radar detectors
RF Diode Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package quantity and compliance status. The datasheet identifies MADS-001317-1278HP as the 100-piece Gel Pack variant of the MA4E1317. Confirm RoHS compliance requirements prior to procurement, as standard variants may differ from lead-free alternatives like MADS-001317-1500.
RF Diode Selection Notes
Select this component for high-frequency mixer designs requiring low parasitic capacitance and minimal series resistance. Ensure the application supports GaAs technology and flip chip mounting techniques. Verify that the operating temperature range of -65°C to +125°C aligns with system constraints. Consider the anti-parallel pair variant if sub-harmonic pumping and LO suppression are required.
RF Diode Part Context
This part is a commercial packaging variant of the MA4E1317 single Schottky diode within the MA4Exxxx series. It utilizes Case Style 1278 dimensions. The series is fabricated on OMCVD epitaxial wafers to ensure high device uniformity and extremely low parasitics, distinguishing it from standard packaged diodes.
RF Diode Replacement Considerations
MADS-001317-1500 is an electrically equivalent alternative that supports Sn63/Pb37 solder, RoHS compliant solder, or conductive epoxy mounting.
RF Diode FAQ
What is the maximum incident power rating?
The absolute maximum ratings specify both Incident LO Power and Incident RF Power at +20 dBm.
How is the series resistance determined?
Series resistance is calculated by measuring the dynamic resistance and subtracting the junction resistance of 2.6 Ω.
Can the die be mounted junction side up?
Yes, the die can be assembled with the junction side up, allowing for wire or ribbon bonds to be made to the pads.
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