RF Diode MADS-002502-1246HP product image

MADS-002502-1246HP

$3.90
  • Description:RF DIODE SCHOTTKY 5V 50MW DIE
  • Series:MA4E2502

SKU:f607224fcf8b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MADS-002502-1246HP is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 5V 50MW DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MADS-002502-1246HP

  • Description:RF DIODE SCHOTTKY 5V 50MW DIE
  • Series:MA4E2502
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):5V
  • Current - Max:20 mA
  • Capacitance @ Vr, F:0.12pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):50 mW
  • Operating Temperature:175°C (TJ)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MADS-002502-1246HP

MADS-002502-1246HP

RF Diode Overview

The MADS-002502-1246HP is a high barrier silicon Schottky diode from the MA4E2502 series, fabricated using MACOM's patented HMIC process. It operates within DC to 18 GHz frequencies with an absolute maximum reverse voltage of 5 V and forward current of 20 mA. The device features a typical junction capacitance of 0.10 pF at 0 V bias and a slope resistance ranging from 11 Ω to 15 Ω. It supports an operating temperature range of -40°C to +125°C and includes Class 0 HBM ESD protection.

RF Diode Feature Summary

  • Utilizes rugged HMIC construction with polyimide scratch protection for enhanced mechanical reliability
  • Features extremely low parasitic capacitance and inductance suitable for microwave circuits
  • Eliminates wirebonds by allowing direct surface mount placement on hard or soft substrates

RF Diode Applications

  • Microwave mixers through Ku band frequencies
  • Sub-harmonic mixer circuits
  • RF detectors
  • Signal limiters

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type. The datasheet indicates that 'P' denotes a 3000 piece reel configuration. Ensure compatibility with standard surface mount die attach techniques and verify soldering parameters for hard substrate applications before procurement.

RF Diode Selection Notes

Select this component for lower power applications requiring reliable beam lead replacement. The high barrier variant offers higher forward voltage compared to low or medium barrier options. Consider the 1246 case style dimensions when designing PCB footprints and ensure adequate thermal management for dissipated power limits.

RF Diode Part Context

This part belongs to the MA4E2502 Surmount Series, which includes low, medium, and high barrier variants. The series utilizes silicon pedestals embedded in a glass dielectric to provide excellent loss and power dissipation characteristics. The HMIC technology allows these devices to serve as robust alternatives to fragile conventional beam lead diodes.

RF Diode Replacement Considerations

The datasheet explicitly recommends the MA4E2502H-1246 chip as the corresponding Surmount diode for replacing more fragile beam lead diodes. This alternative connects directly to circuit boards via solder without requiring wirebonds.

MADS-002502-1246HPMADS-002502-1246HP
$3.90
Buy Now