MAGX-002731-180L00

Overview

The MAGX-002731-180L00 is a GaN on SiC HEMT pulsed power transistor designed for operation between 2700 and 3100 MHz. It delivers a peak output power of 180 Wpk with a typical gain of 11.8 dB and drain efficiency of 51% under standard test conditions (VDD = 50 V, IDQ = 500 mA, 300 µs pulse, 10% duty cycle). The device features a thermally enhanced Cu/Mo/Cu flanged ceramic package and supports load mismatch tolerances up to 10:1.

Feature Summary

• GaN Depletion Mode HEMT Microwave Transistor
• Broadband Class AB Operation
• Thermally Enhanced Cu/Mo/Cu Package

Applications

• Civilian Pulsed Radar
• Military Pulsed Radar

Procurement Notes

Verify the specific package variant required for your application when placing orders. The MAGX-002731-180L00 corresponds to the Standard Flange configuration, while the MAGX-002731-180L0S denotes the Earless Flange option. Ensure that evaluation boards are explicitly noted as compatible with the selected flange type during procurement to avoid assembly mismatches.

Selection Notes

Select this component for high-power radar systems requiring robust performance in extreme mismatched load conditions. The device offers high breakdown voltages and ruggedness suitable for demanding civilian and military applications. Consider thermal management requirements carefully, as junction temperature directly impacts the device's mean time to failure and operational lifetime.

Part Context

This part belongs to MACOM's line of Gallium Nitride on Silicon Carbide RF power transistors optimized for pulsed applications. It utilizes state-of-the-art wafer fabrication processes to provide high gain, efficiency, and bandwidth. The product family includes variants with different mounting configurations to accommodate diverse mechanical integration needs in radar transmitter modules.

Replacement Considerations

MAGX-002731-180L0S serves as the direct earless flange alternative within the same series.

FAQ

What is the maximum load mismatch tolerance?

The device can tolerate a load mismatch of up to 10:1 VSWR.

How should the bias sequencing be managed?

Turn on VDS first, then increase VGS to reach IDS current, and finally apply RF power. To turn off, remove RF power, decrease VGS to pinch-off, and then decrease VDS to 0 V.