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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：GaN
- Frequency：0Hz ~ 6GHz
- Gain：23dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：8W
- Voltage - Rated：84 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：12-VFDFN Exposed Pad
- Supplier Device Package：12-PDFN (3x4)
- Configuration：-
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Overview
The MAPC-A3005-ADTR1 is an unmatched GaN on SiC power transistor manufactured by MACOM Technology Solutions. It delivers 8W of output power across a frequency range from DC to 6 GHz. The device operates with a rated voltage of 84 V and utilizes a G28V5-1C configuration. Packaged in a 12-VFDFN exposed pad surface-mount format, it supports a test current of 100 mA. This component is designed for high-performance applications requiring robust RF power generation within the specified bandwidth.
Feature Summary
- Utilizes high-performance GaN on SiC production process
- Provides unmatched power transistor functionality
- Supports defense and commercial application requirements
Applications
- Defense systems
- Commercial RF infrastructure
- High-power amplifier modules
Procurement Notes
Verify the specific suffix ADTR1 indicates tape and reel packaging when sourcing. Confirm that the 84 V rated voltage aligns with system biasing capabilities. Ensure the 12-VFDFN exposed pad footprint matches the target PCB design. Validate RoHS compliance status through official manufacturer documentation prior to integration.
Selection Notes
Select this component for designs requiring 8W output power up to 6 GHz. Consider the exposed pad thermal management needs inherent to the VFDFN package. Evaluate the unmatched topology against circuit requirements for external matching networks. Assess the 84 V operating limit against available supply rails.
Part Context
This part belongs to MACOM's portfolio of GaN FETs designed for high-speed connectivity and analog signal processing. It complements their broader range of components supporting coherent transmission and high-density interconnect deployments. The device addresses demands for size, power, and signal integrity in modern electrical and optical communication systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing board layouts if considering alternative unmatched GaN transistors.
