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Product Detailed Parameters
- Description：RF TRANS NPN 80V 1.15GHZ 2L-FLG
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：80V
- Frequency - Transition：1.15GHz
- Noise Figure (dB Typ @ f)：-
- Gain：7.8dB
- Power - Max：11600W
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：250A
- Operating Temperature：200°C
- Mounting Type：Chassis Mount
- Package / Case：2L-FLG
- Supplier Device Package：2L-FLG
- Grade：-
- Qualification：-
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Overview
The MAPR-001011-850S00 is an NPN silicon microwave power transistor designed for avionics pulsed power applications. It operates in the 1025–1150 MHz frequency range with a 10µs pulse width and 1% duty cycle. The device delivers 850W output power at a collector efficiency of 42% to 53%, requiring 112W to 117W input power. Key electrical specifications include a collector-emitter breakdown voltage of 80V, a thermal resistance of 0.015°C/W, and a maximum junction temperature of 200°C.
Feature Summary
- Common base configuration with broadband Class C operation
- High-efficiency inter-digitized geometry with diffused emitter ballasting resistors
- Internal input and output impedance matching
- Hermetic metal/ceramic package construction
Applications
- Avionics pulsed power systems
- Microwave radar transmitters
- Broadband RF power amplification
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official MACOM documentation. Confirm that the physical package matches the hermetic metal/ceramic specification and check datasheet revisions to ensure alignment with current manufacturing standards before procurement.
Selection Notes
Select this component for high-power avionics applications requiring pulsed operation within the 1025–1150 MHz band. Ensure the design accommodates the 50V supply requirement and manages the 0.015°C/W thermal resistance effectively. Verify load mismatch tolerance capabilities against system VSWR requirements.
Part Context
This device belongs to the MACOM avionics pulsed power transistor series, utilizing NPN silicon technology. It is engineered specifically for demanding aerospace environments where high peak power output and reliability under pulsed conditions are critical operational parameters.
Replacement Considerations
Consult official MACOM documentation for confirmed substitute part numbers. Do not assume functional equivalence with other RF power transistors without verifying pinout, thermal characteristics, and electrical ratings.
