MAPRST0912-350

Overview

The MAPRST0912-350 is an NPN silicon microwave power transistor designed for avionics pulsed power applications. It operates within the 960 to 1215 MHz frequency range with a 10 µs pulse width and 10% duty cycle. The device delivers a minimum output power of 350 W at a power gain of 9.4 dB and collector efficiency of 45%. Key electrical specifications include a collector-emitter breakdown voltage of 65 V, thermal resistance of 0.13 °C/W, and input return loss of -9 dB. It features internal impedance matching and load mismatch tolerance of 1.5:1.

Feature Summary

• NPN silicon microwave power transistor with common base configuration
• Broadband Class C operation optimized for high efficiency inter-digitized geometry
• Internal input and output impedance matching for simplified integration
• Hermetic metal/ceramic package with gold metallization system

Applications

• Avionics pulsed power systems
• High-power RF amplification in the L-band spectrum
• Military and aerospace radar transmitters

Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm datasheet revision status (Rev. V1) and RoHS compliance documentation prior to procurement. Ensure supply chain integrity by validating part markings against official M/A-COM Technology Solutions Inc. specifications.

Selection Notes

Select this component for applications requiring high pulsed power output in the 960-1215 MHz band. Evaluate thermal management requirements based on the 0.13 °C/W junction-to-case thermal resistance. Ensure bias circuits support the specified 50 V collector voltage and peak current limits. Verify that the host system can accommodate the hermetic metal/ceramic package form factor.

Part Context

This device belongs to the MAPR series of avionics pulsed power transistors from M/A-COM Technology Solutions Inc. It utilizes NPN silicon technology with diffused emitter ballasting resistors. The product line targets demanding RF environments requiring robust performance under pulsed conditions with high collector efficiency.

Replacement Considerations

Consult MACOM technical support for verified substitute part numbers. Cross-referencing requires matching frequency range, output power, and package dimensions. Do not assume functional equivalence with other RF power transistors without explicit manufacturer validation.