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The MAVR-000120-14110P is a gallium arsenide flip-chip hyperabrupt varactor diode from MACOM Technology Solutions. It features constant gamma for linear tuning and is usable past 70 GHz. The device is fabricated on OMCVD epitaxial wafers with silicon nitride passivation and polyimide scratch protection. Electrical specifications include a breakdown voltage of 20 V minimum at 10 µA reverse current, and a maximum reverse leakage current of 100 nA at 14 V. Total capacitance ranges from 0.30 pF to 1.1 pF at 0 V reverse bias (1 MHz). At 4 V reverse bias and 50 MHz, the Q factor is typically 3000. Gamma is maintained between 0.9 and 1.1 within a 2 V to 12 V range.
Verify the specific ordering suffix against official documentation to confirm packaging type. The '0P' suffix indicates pocket tape packaging, while other suffixes may denote different container formats such as gel packs. Confirm RoHS compliance status and lead times directly with authorized suppliers prior to procurement.
Select this component for designs requiring low parasitic capacitance and high Q factors in microwave frequencies. Ensure the operating temperature remains within -40°C to +125°C. Verify that the required reverse bias voltage falls within the 2 V to 12 V range for optimal gamma consistency. Consider mounting methods compatible with either solder or conductive epoxy based on substrate requirements.
This part belongs to the MAVR-000120 series of GaAs flip-chip varactor diodes. These devices are designed for high uniformity and extremely low parasitics using OMCVD epitaxial material. The series supports various packaging options including pocket tape and gel packs to accommodate different manufacturing workflows.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative components based on matching electrical parameters such as breakdown voltage, capacitance range, and Q factor if substitution is necessary.
The typical Q factor is 3000 when measured at a reverse voltage of 4 V and a frequency of 50 MHz.
The diode is fully passivated with silicon nitride and includes an additional layer of polyimide to protect against scratches and junction damage during automated or manual handling.
The maximum operating temperature is +125°C, while the storage temperature can range up to +150°C.