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The MAX2602ESA is a silicon bipolar RF power transistor in an 8-pin SO package, operating from -40°C to +85°C. It delivers 1W output power at 900MHz with 58% collector efficiency from a 3.6V supply. The device includes an on-chip biasing diode for accurate thermal tracking. Key electrical parameters include a VCEO of 17V, VEBO of 2.3V, and DC current gain (hFE) minimum of 100. Continuous power dissipation is 6.4W at +70°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and temperature range. Ensure the component matches the required RoHS compliance status before integration into production designs.
Select the MAX2602ESA over the MAX2601 when integrated thermal compensation is required for stable biasing. Ensure the PCB layout provides adequate ground plane connection to the backside slug for optimal thermal dissipation and low-inductance emitter grounding.
This component belongs to the MAX2601/MAX2602 series of RF power transistors designed for portable wireless equipment. The MAX2602 variant specifically adds an internal biasing diode to simplify amplifier design and improve thermal stability compared to the standard MAX2601.
The MAX2601ESA is a direct functional substitute if the integrated biasing diode is not required. Verify pin compatibility and thermal performance requirements before substitution.
The BIAS pin connects to an on-chip diode that matches the thermal characteristics of the power transistor. It allows for accurate control of the collector current as temperature changes.
The backside slug must be soldered directly to the PC board ground plane to reduce emitter inductance and provide the primary thermal path for heat dissipation.
No, the MAX2602 does not require negative bias or supply switching, allowing it to operate directly from positive battery voltages.