Diode Arrays MB10H100CTHE3_B/P product image

MB10H100CTHE3_B/P

$0.64
  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-

SKU:63a7978fe0e7 Category: Brand:

  
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MB10H100CTHE3_B/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 5A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MB10H100CTHE3_B/P

  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:760 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MB10H100CTHE3_B/P

MB10H100CTHE3_B/P

Diode Arrays Overview

The MB10H100CTHE3_B/P is a Vishay Schottky rectifier featuring a dual common cathode configuration in a TO-263 package. It supports a repetitive reverse voltage of 100 V and an average forward current of 10 A per diode. The device exhibits a maximum forward voltage of 850 mV at 10 A and a low reverse leakage current of 3.5 µA. It withstands a non-repetitive peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • Dual common cathode Schottky barrier rectifier architecture
  • Low forward voltage drop for improved efficiency
  • High thermal stability with extended operating temperature range
  • Lead-free construction compliant with RoHS directives

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling diodes in power supplies
  • Polarity protection circuits
  • Reverse battery protection systems

Diode Arrays Procurement Notes

Verify the specific suffix _B/P against the manufacturer datasheet to confirm packaging details, as suffixes often denote tape-and-reel quantities or specific manufacturing lot codes. Ensure the component matches the required lead-free and halogen-free specifications if environmental compliance is mandatory for the assembly process.

Diode Arrays Selection Notes

Select this component when a dual-channel Schottky rectification solution is required in a surface-mount form factor. The 100 V rating suits low-voltage DC bus applications, while the TO-263 package provides adequate thermal dissipation for 10 A loads without requiring extensive heatsinking.

Diode Arrays Part Context

This part belongs to Vishay's MBRB series of high-current Schottky rectifiers. It utilizes silicon carbide (SiC) metal-schottky technology to achieve superior switching characteristics compared to standard p-n junction diodes, offering faster response times and reduced recovery losses in high-frequency switching environments.

Diode Arrays Replacement Considerations

Direct substitutes include the MBRB10H100CT-M3/I and MBRB10H100-E3/81 from Vishay, which share identical electrical ratings and pin configurations. Verify that alternative packages match the TO-263 footprint requirements.

MB10H100CTHE3_B/PMB10H100CTHE3_B/P
$0.64
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