RF Diode MBD110DWT1G product image

MBD110DWT1G

$0.09
  • Description:RF DIODE SCHOTTKY 7V 120MW SC88
  • Series:-

SKU:0130aed21f57 Category: Brand:

  
  • Quantity
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MBD110DWT1G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is RF DIODE SCHOTTKY 7V 120MW SC88. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MBD110DWT1G

  • Description:RF DIODE SCHOTTKY 7V 120MW SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Diode Type:Schottky - 2 Independent
  • Voltage - Peak Reverse (Max):7V
  • Current - Max:-
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):120 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MBD110DWT1G

MBD110DWT1G

RF Diode Overview

The MBD110DWT1G is a dual isolated Schottky barrier diode manufactured by onsemi. It features a silicon construction with a maximum repetitive reverse voltage (VRRM) of 7 V and a forward voltage (VF) of 600 mV at specified conditions. The device supports a maximum forward current (IF) of 10 mA and exhibits a low reverse leakage current (IR) of 200 nA. Operating within a temperature range of -55 °C to +125 °C, it is housed in an SC-88-6 surface-mount package.

RF Diode Feature Summary

  • Dual isolated configuration for independent circuit paths
  • Low forward voltage drop for efficient power handling
  • Compact SC-88-6 surface-mount packaging

RF Diode Applications

  • RF signal detection circuits
  • Small-signal switching applications
  • Low-voltage rectification tasks

RF Diode Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the received parts match the exact part number MBD110DWT1G to ensure compatibility with design specifications. Check for RoHS compliance status as required by project regulations. Ensure storage conditions adhere to manufacturer guidelines to maintain component integrity prior to assembly.

RF Diode Selection Notes

Select this component for designs requiring compact dual Schottky diodes with low forward voltage characteristics. The 7 V rating suits low-voltage signal processing rather than high-power rectification. Consider the SC-88-6 footprint constraints during PCB layout. Evaluate thermal management requirements given the small package size and limited current capacity.

RF Diode Part Context

This component belongs to onsemi's series of dual Schottky barrier diodes designed for space-constrained applications. The MBD110DWT1G variant specifically targets low-voltage RF and signal conditioning markets. It complements other devices in the family offering different voltage ratings while maintaining consistent packaging and performance profiles for standardized design implementations.

RF Diode Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Ensure any substitute maintains the same SC-88-6 package dimensions and isolation characteristics to fit existing board layouts without modification.

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