MBR10H100CT-E3/4W

Description：DIODE ARR SCHOTT 100V 5A TO2203
Series：-

SKU:d0b24fa0a57a Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

MBR10H100CT-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 5A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR10H100CT-E3/4W

Description：DIODE ARR SCHOTT 100V 5A TO2203
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：5A
Voltage - Forward (Vf) (Max) @ If：760 mV @ 5 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3.5 µA @ 100 V
Operating Temperature - Junction：-65°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR10H100CT-E3/4W

MBR10H100CT-E3/4W

Diode Arrays Overview

The MBR10H100CT-E3/4W is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes High Barrier Technology to deliver improved performance at elevated temperatures. The device features a TO-220AB package and provides a maximum repetitive peak reverse voltage of 100 V with a total average forward rectified current of 10 A (5 A per diode). Key electrical characteristics include a low forward voltage drop, minimal leakage current, and a high forward surge capability of 150 A. The component supports an operating junction temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

High Barrier Technology for enhanced high-temperature operation
Guardring structure providing overvoltage protection
Low forward voltage drop and low leakage current for high efficiency
High forward surge capability suitable for demanding switching applications

Diode Arrays Applications

High frequency rectification in switching mode power supplies
Freewheeling diodes in DC/DC converter circuits
Polarity protection in electronic systems

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm compliance status and packaging details. Confirm that the TO-220AB package variant matches the required thermal and mechanical constraints for the target application. Ensure all technical parameters are validated for the specific operating conditions before integration.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for high-frequency rectification or freewheeling duties. The High Barrier Technology makes it suitable for environments requiring stable performance at elevated junction temperatures up to 175 °C. Evaluate the thermal resistance requirements relative to the TO-220AB package capabilities.

Diode Arrays Part Context

This part belongs to the MBR10HxxCT series of dual common cathode Schottky rectifiers. The series includes variants with different reverse voltage ratings while maintaining similar current handling and package configurations. The E3 suffix indicates RoHS compliance and halogen-free commercial grade material categorization.