MBR10L100CT

Diode Arrays Overview

The MBR10L100CT is a 10A, 100V Low VF Schottky Barrier Rectifier manufactured by Taiwan Semiconductor. It features a Dual Anode Common Cathode configuration in a TO-220AB package. Key electrical parameters include a repetitive peak reverse voltage (VRRM) of 100 V, a forward current (IF) of 10 A, and a surge peak forward current (IFSM) of 120 A. The junction temperature range is -55°C to +150°C.

Diode Arrays Feature Summary

• Low power loss and high efficiency design
• Guard ring structure for overvoltage protection
• High surge current capability

Diode Arrays Applications

• Switching mode power supply (SMPS)
• Adapters
• DC to DC converters

Diode Arrays Procurement Notes

Verify the specific ordering code against the datasheet to confirm packaging details. The standard MBR10L100CT comes in a tube of 50 units. If automotive qualification is required, select the MBR10L100CTH variant which indicates AEC-Q101 compliance. Ensure the component meets RoHS and halogen-free standards as specified in the mechanical data section.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency rectification. The dual common cathode configuration allows for use in full-wave rectifier circuits. Verify thermal management requirements based on the junction-to-case thermal resistance of 2.8 °C/W. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature range.

Diode Arrays Part Context

This device belongs to the MBR10L series of Low VF Schottky Barrier Rectifiers from Taiwan Semiconductor. It utilizes silicon technology to provide high current capability with low forward voltage drop. The TO-220AB package provides robust mechanical stability and thermal performance suitable for through-hole mounting in power electronics applications.

Diode Arrays Replacement Considerations

Direct replacements must match the 10A current rating, 100V reverse voltage, and Dual Anode Common Cathode configuration. Verify that alternative components offer comparable forward voltage characteristics and surge current capabilities to ensure circuit performance consistency.

Diode Arrays FAQ

Is the MBR10L100CT qualified for automotive applications?

Standard versions are not explicitly stated as automotive qualified. However, the MBR10L100CTH variant is AEC-Q101 qualified.

What is the maximum junction temperature for this device?

The maximum junction temperature (TJ MAX) is 150°C.

Does the device feature overvoltage protection?

Yes, it includes a guard ring structure designed for overvoltage protection.