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MBR200100CTS is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 200A SOT227. Review the specifications below when checking this part for your BOM.
The MBR200100CTS is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It utilizes an SOT-227 package and provides a repetitive peak reverse voltage of 100 V with a continuous forward current rating of 200 A at a case temperature of 85 °C. The device operates within a junction temperature range of -40 to 175 °C. Electrical characteristics include a typical forward voltage of 0.95 V at 100 A and 25 °C, and a maximum reverse current of 10 µA at 80 V. Thermal resistance from junction to case is specified at 1.87 °C/W.
Verify the specific ordering suffix against official GeneSiC documentation to confirm exact packaging and handling specifications. Confirm that the component meets all required environmental standards for the intended application environment before finalizing procurement orders.
Select this component when applications require high current handling up to 200 A combined with low forward voltage drops. Ensure the cooling solution can maintain the case temperature below 85 °C to sustain the rated continuous forward current without exceeding thermal limits.
This part belongs to the GeneSiC Silicon Power Schottky Diode series designed for high-efficiency power conversion. The SOT-227 package offers a compact footprint suitable for industrial power modules where space constraints and thermal performance are critical factors in system design.
Consult official GeneSiC cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and electrical ratings to prevent circuit incompatibility.
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